Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 807/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 60V 6.3A 1212-8 |
6.174 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6.3A (Ta) | 4.5V, 10V | 19mOhm @ 10A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8 |
8.496 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 13A (Ta) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 3V @ 250µA | 25nC @ 4.5V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8 |
2.016 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 4.5V | 19mOhm @ 11.4A, 4.5V | 1V @ 300µA | 41nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 13A PPAK SO-8 |
3.600 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 10V | 6.8mOhm @ 22A, 10V | 3V @ 250µA | 170nC @ 10V | ±25V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 30V 14A PPAK SO-8 |
4.698 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 5.7mOhm @ 24A, 10V | 3V @ 250µA | 180nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 12.5A PPAK SO-8 |
8.442 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12.5A (Ta) | 1.8V, 4.5V | 7.3mOhm @ 20A, 4.5V | 900mV @ 1mA | 150nC @ 5V | ±8V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
7.128 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 30mOhm @ 5.9A, 4.5V | 1V @ 250µA | 38nC @ 8V | ±8V | 1200pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Infineon Technologies |
MOSFET N-CH 240V .11A SOT-23 |
2.394 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1nC @ 10V | ±20V | 77pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220-3 |
4.392 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO-220-3 |
7.380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220-3 |
7.236 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 20A TO-220-3 |
3.528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
8.280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
2.304 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
3.636 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
8.280 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3 |
8.316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO251-3 |
3.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO251-3 |
2.430 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK |
2.502 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-251-3 |
3.600 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO-251-3 |
3.780 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 35A IPAK |
8.424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-251-3 |
7.056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO-263-3 |
5.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 20A TO220AB |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 4V @ 250µA | 55.9nC @ 10V | ±20V | 1627pF @ 25V | - | 112W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 6mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5800pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK |
7.632 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A DPAK |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |