Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 763/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 500V 75A T-MAX |
4.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 800V 7A TO-220 |
4.752 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.5Ohm @ 4A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V | 1335pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 800V 42A SOT-227 |
3.762 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 42A (Tc) | 10V | 140mOhm @ 21A, 10V | 5V @ 5mA | 285nC @ 10V | ±30V | 7238pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 29A SOT-227 |
6.462 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 29A (Tc) | 10V | 240mOhm @ 14.5A, 10V | 5V @ 2.5mA | 160nC @ 10V | ±30V | 4670pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 31A TO-264 |
2.970 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 31A (Tc) | 10V | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160nC @ 10V | ±30V | 4670pF @ 25V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 800V 33A TO-264 |
7.632 |
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POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 800V | 33A (Tc) | 10V | 240mOhm @ 16.5A, 10V | 4V @ 2.5mA | 425nC @ 10V | - | 7740pF @ 25V | - | - | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 500V 84A T-MAX |
2.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340nC @ 10V | ±30V | 13500pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 800V 8A TO-220 |
3.402 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.35Ohm @ 4A, 10V | 5V @ 500µA | 43nC @ 10V | ±30V | 1335pF @ 25V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
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Microsemi |
MOSFET N-CH 1000V 9A TO-247 |
4.464 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 9A (Tc) | 10V | 1.4Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2605pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
4.626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 6.2A DIRECTFET |
4.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | ±20V | 2340pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Renesas Electronics America |
MOSFET N-CH 100V 15A 5LFPAK |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta) | 8V, 10V | 42mOhm @ 7.5A, 10V | - | 21nC @ 10V | ±20V | 1445pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 16A 8SOP |
3.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.7mOhm @ 8A, 10V | - | 18nC @ 4.5V | ±20V | 2650pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 650V 16A TO-3PN |
6.192 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 440mOhm @ 8A, 10V | 5V @ 250µA | 63nC @ 10V | ±30V | 3095pF @ 25V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F |
3.436 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 940pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 400V 2A DPAK |
5.616 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 225pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK |
2.106 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.2A, 10V | 5V @ 250µA | 6nC @ 10V | ±30V | 250pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 4.6A 9-BGA |
6.624 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.6A, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | ±12V | 754pF @ 10V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-BGA (1.55x1.55) | 9-WFBGA |
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ON Semiconductor |
MOSFET N-CH 500V 9A D2PAK |
2.088 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±30V | 1030pF @ 25V | - | 173W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 150V 150A SOT-227 |
3.078 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 12.5mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9100pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 300V 52A PLUS220 |
8.046 |
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PolarHT™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 66mOhm @ 500mA, 10V | 5V @ 4mA | 110nC @ 10V | ±20V | 3490pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
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Infineon Technologies |
MOSFET N-CH 30V 95A TDSON-8 |
4.482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 95A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 50µA | 28nC @ 5V | ±20V | 3660pF @ 15V | - | 2.8W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
2.412 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 650V 9A TO-252 |
3.726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 2.6A SOT-223 |
4.572 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.6A, 10V | 2V @ 20µA | 20nC @ 10V | ±20V | 380pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 350V 12A TO-220F |
2.862 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 350V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 1110pF @ 25V | - | 31.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 20V 3A MICROFET2X2 |
6.048 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6nC @ 4.5V | ±8V | 435pF @ 10V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 4.6A BGA |
3.546 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 1.5V, 4.5V | 40mOhm @ 4.6A, 4.5V | 1V @ 250µA | 13nC @ 4.5V | ±8V | 1010pF @ 10V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 9-BGA (1.5x1.6) | 9-VFBGA |
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ON Semiconductor |
MOSFET N-CH 100V 10A DPAK |
5.688 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4.5V, 10V | 160mOhm @ 10A, 10V | 3V @ 250µA | 16nC @ 10V | ±16V | 425pF @ 25V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
8.892 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |