Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 751/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 25V 80A TO-263 |
6.372 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 55A, 10V | 2V @ 100µA | 57nC @ 5V | ±20V | 7027pF @ 15V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO-263 |
8.370 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 100A, 10V | 2V @ 270µA | 225nC @ 10V | ±20V | 7600pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 80A TO-263 |
3.114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32nC @ 5V | ±20V | 3877pF @ 15V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO-263 |
2.592 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.7mOhm @ 100A, 10V | 4V @ 270µA | 167nC @ 10V | ±20V | 6100pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO-263 |
8.838 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 60A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | 3209pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-263 |
5.094 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2V @ 150µA | 126nC @ 10V | ±20V | 4300pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-263 |
3.384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2V @ 125µA | 104nC @ 10V | ±20V | 3500pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-263 |
8.388 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | ±20V | 14230pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-263 |
2.790 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 3.5mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | ±16V | 17270pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 78A TO-263 |
7.650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 78A (Tc) | 4.5V, 10V | 11mOhm @ 78A, 10V | 2V @ 94µA | 79nC @ 10V | ±20V | 2700pF @ 30V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-263 |
2.100 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 11.7mOhm @ 75A, 10V | 4V @ 94µA | 62nC @ 10V | ±20V | 2100pF @ 30V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-263 |
6.606 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 12.5mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1355pF @ 15V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-263 |
3.276 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 10V | 15.4mOhm @ 23A, 10V | 4V @ 30µA | 57nC @ 10V | ±20V | 2980pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-263 |
7.920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 5V, 10V | 13.1mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | ±16V | 3600pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-263 |
4.554 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 4.5mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | ±16V | 13060pF @ 25V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-263 |
5.220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 5V, 10V | 5.6mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | ±16V | 9417pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A TO-263 |
5.256 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | 2V @ 30µA | 19nC @ 5V | ±20V | 2390pF @ 15V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO-252 |
8.658 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 60A, 10V | 2V @ 70µA | 40nC @ 5V | ±20V | 5200pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-252 |
8.460 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 11.6mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1300pF @ 15V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO-252 |
6.426 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 14.4mOhm @ 50A, 10V | 4V @ 80µA | 54nC @ 10V | ±20V | 1900pF @ 30V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 18A TO-252 |
2.178 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 64mOhm @ 18A, 10V | 2V @ 16µA | 13nC @ 10V | ±20V | 470pF @ 30V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 16A TO-252 |
6.300 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 10V | 80mOhm @ 16A, 10V | 4V @ 16µA | 10nC @ 10V | ±20V | 370pF @ 30V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23 |
7.308 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323 |
7.938 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-263 |
8.784 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | ±20V | 420pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A TO-263 |
7.020 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22nC @ 10V | ±20V | 470pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-263 |
8.550 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | ±20V | 580pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-263 |
3.762 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A TO-263 |
7.272 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | ±20V | 444pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-263 |
5.094 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | ±20V | 1460pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |