Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 678/999
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Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 30V 116A TO-262 |
8.442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 89A TO-262 |
4.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB |
5.760 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 420mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | 2700pF @ 25V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 24A SUPER-220 |
5.058 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 230mOhm @ 13.8A, 10V | 4V @ 250µA | 115nC @ 10V | ±30V | 3400pF @ 25V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | Super-220™ |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-262 |
5.436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 37A I-PAK |
3.348 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 75A I-PAK |
2.088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 10V | 9.5mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 36A I-PAK |
8.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 8.7A I-PAK |
4.770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 310pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A I-PAK |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 26A I-PAK |
5.508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK |
7.182 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1030pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 42A I-PAK |
5.112 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 1510pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
8.550 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 100A I-PAK |
2.862 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 140A I-PAK |
6.048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 250V 14A I-PAK |
4.914 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 810pF @ 25V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
7.200 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 2.6A SOT223 |
7.614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.6A (Ta) | 10V | 185mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | ±30V | 420pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC |
6.066 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A 8-SOIC |
4.428 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | ±20V | 440pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 20A TO-247 |
3.150 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 100V 3.7A SSOT-6 |
7.704 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.7A (Ta) | 6V, 10V | 70mOhm @ 3.7A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 1215pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 FLMP | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
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ON Semiconductor |
MOSFET P-CH 20V 2.2A SSOT-6 |
7.092 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.5V, 4.5V | 150mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 5.2nC @ 4.5V | ±12V | 369pF @ 10V | Schottky Diode (Isolated) | 960mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 20V 8A SSOT-6 |
4.788 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.8V, 4.5V | 20mOhm @ 8A, 4.5V | 1.5V @ 250µA | 55nC @ 4.5V | ±8V | 3524pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 FLMP | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
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ON Semiconductor |
MOSFET P-CH 20V 7A SSOT-6 |
4.986 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 7A (Ta) | 2.5V, 4.5V | 22mOhm @ 7A, 4.5V | 1.5V @ 250µA | 38nC @ 5V | ±12V | 2640pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 FLMP | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
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ON Semiconductor |
MOSFET N-CH 30V 12.5A SSOT-6 |
5.490 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 3V @ 250µA | 20nC @ 5V | ±20V | 1444pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 FLMP | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
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ON Semiconductor |
MOSFET P-CH 20V 3.3A 8-SOIC |
5.004 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 125mOhm @ 3.3A, 10V | 3V @ 250µA | 3nC @ 5V | ±20V | 182pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 20V 3.3A 8-SOIC |
6.534 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 125mOhm @ 3.3A, 10V | 2V @ 250µA | 10nC @ 10V | ±20V | 270pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC |
6.228 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 59mOhm @ 5.3A, 10V | 3V @ 250µA | 8nC @ 5V | ±25V | 535pF @ 15V | Schottky Diode (Isolated) | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |