Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 67/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CH 50V 9.1A 6DFN |
48.666 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 9.1A (Ta) | 4.5V, 10V | 15mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 902.7pF @ 25V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN2020 (2x2) | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 17A 8TSON-ADV |
38.214 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 16mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | ±20V | 1600pF @ 50V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET P-CH 20V 2.3A 6-WDFN |
47.760 |
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µCool™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 4.5V | 100mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | ±8V | 531pF @ 10V | Schottky Diode (Isolated) | 710mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 30V 3.1A SOT23-3 |
89.172 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 4.5V, 10V | 53mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 540pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 20V 3A 6-TSOP |
69.234 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 57mOhm @ 4A, 4.5V | 1.8V @ 250µA | 5nC @ 4.5V | ±12V | 295pF @ 10V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 6-TSOP |
95.742 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±12V | - | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 3.1A SOT-23 |
74.400 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 10V | 53mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 540pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8 |
47.844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1200pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 41A DPAK |
36.564 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.4A (Ta), 41A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 9nC @ 4.5V | ±20V | 837pF @ 15V | - | 1.38W (Ta), 26.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 3.6A SOT223 |
6.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 3.6A (Ta) | 6V, 10V | 110mOhm @ 3.3A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 549pF @ 50V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 30V 1.9A SOT23 |
69.222 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1.9A (Tc) | 5V, 10V | 120mOhm @ 1A, 10V | 2V @ 1mA | 10nC @ 10V | ±20V | 190pF @ 10V | - | 830mW (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SOIC |
87.156 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 13.3mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | ±25V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 18A TO252 |
36.168 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4nC @ 10V | ±20V | 870pF @ 30V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 6.2A SSOT-6 |
135.102 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 16nC @ 4.5V | ±8V | 1125pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 30V 5.9A SOT-23 |
302.964 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Tc) | 4.5V, 10V | 45mOhm @ 4.2A, 10V | 2.5V @ 250µA | 21nC @ 10V | ±20V | 590pF @ 15V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |
102.336 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 6.6A, 10V | 2.5V @ 250µA | 45nC @ 10V | ±20V | 1400pF @ 15V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerPak® ChipFet (3x1.9) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3 |
47.994 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.16A (Ta) | 4.5V, 10V | 47mOhm @ 3.5A, 10V | 3V @ 250µA | 4.5nC @ 5V | ±20V | 305pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 30V 44A LL LFPAK |
126.450 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Tc) | 4.5V, 10V | 9.8mOhm @ 15A, 10V | 1.95V @ 1mA | 10.4nC @ 10V | ±20V | 681pF @ 15V | - | 34W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 40V 12A TO252 |
117.288 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 12A (Tc) | 4.5V, 10V | 44mOhm @ 12A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 1125pF @ 20V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89 |
176.844 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | ±20V | 104pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Nexperia |
MOSFET N-CH 100V 9.4A LFPAK |
142.506 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 5V | 146mOhm @ 2A, 10V | 2.1V @ 1mA | 6.8nC @ 5V | ±10V | 716pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 80V 11.8A LFPAK |
25.854 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 11.8A (Tc) | 5V | 98mOhm @ 5A, 10V | 2.1V @ 1mA | 6.2nC @ 5V | ±10V | 706pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET P-CH 240V 0.2A SOT89 |
601.248 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 10V | 12Ohm @ 200mA, 10V | 2.8V @ 1mA | - | ±20V | 90pF @ 25V | - | 560mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
830.982 |
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FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 8V | 94mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.42nC @ 4.5V | -12V | 230pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 4SOT223 |
34.548 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 4.5V, 10V | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4nC @ 10V | ±20V | 140pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET P-CH 20V 4A SOT-23 |
23.286 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 36mOhm @ 2.4A, 4.5V | 950mV @ 250µA | 15.5nC @ 4.5V | ±8V | 1890pF @ 10V | - | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 38.3A 1212-8 |
149.934 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5nC @ 10V | +20V, -16V | 1000pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 2.3A SOT-23 |
28.296 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 2.3A (Tc) | 10V | 234mOhm @ 1.5A, 10V | 2.9V @ 250µA | 10.4nC @ 10V | ±20V | 190pF @ 50V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 5.8A SSOT-6 |
118.860 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.8A (Ta) | 2.5V, 4.5V | 30mOhm @ 5.8A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | ±12V | 1330pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 30V 4.5A SOT23-3 |
664.332 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 4.5V, 10V | 50mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6nC @ 10V | ±20V | 350pF @ 15V | - | 1.25W (Ta), 1.66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |