Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 611/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
5.004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
8.802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
3.096 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
8.676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223 |
7.650 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223 |
4.086 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 250V 790MA SOT223 |
5.130 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 790mA (Tc) | 10V | 2Ohm @ 470mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
3.258 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
2.880 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
5.472 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
7.560 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
3.528 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 14mOhm @ 54A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 4500pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
4.860 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 9mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 7400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC |
3.888 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
6.840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC |
4.608 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 450V 14A TO-247AC |
7.146 |
|
- | N-Channel | MOSFET (Metal Oxide) | 450V | 14A (Tc) | 10V | 350mOhm @ 8.4A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
7.308 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 3400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 11A TO-247AC |
2.844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 1900pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
4.986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 2038pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
7.200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | 3100pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 23A TO-247AC |
7.488 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 13A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.8A TO-247AC |
3.186 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 8.9A TO-247AC |
4.626 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 8.9A (Tc) | 10V | 820mOhm @ 5.3A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1800pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
5.670 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 580mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 2100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
5.724 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3500pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 5.4A TO-247AC |
5.310 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 2Ohm @ 3.2A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 4.7A TO-247AC |
6.606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 4.7A (Tc) | 10V | 2.5Ohm @ 2.8A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1600pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 1000V 4.3A TO-247AC |
2.862 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4.3A (Tc) | 10V | 3.5Ohm @ 2.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1600pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER247 |
8.280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 130mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±30V | 5579pF @ 25V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |