Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 531/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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IXYS |
MOSFET N-CH 500V 16A TO-263AA |
6.246 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 360mOhm @ 8A, 10V | 5V @ 2.5mA | 29nC @ 10V | ±30V | 1515pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH |
8.370 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tj) | 0V | 6Ohm @ 1.5A, 0V | 4.5V @ 250µA | 37.5nC @ 5V | ±20V | 1020pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.1A TO220FP |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
HIGH POWER_LEGACY |
7.254 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 110A TO-3P |
3.834 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 13.5mOhm @ 500mA, 10V | 5.5V @ 250µA | 76nC @ 10V | ±20V | 2210pF @ 25V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 250V 42A TO-3P |
6.696 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 42A (Tc) | 10V | 84mOhm @ 500mA, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 50A TO-3P |
2.808 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 60mOhm @ 50A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 2720pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 62A TO-3P |
7.614 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2250pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 100V 75A TO-3P |
3.762 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 25mOhm @ 500mA, 10V | 5.5V @ 250µA | 74nC @ 10V | ±20V | 2250pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-220 |
4.662 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 270mOhm @ 12A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2890pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 47A 303A 5DFN |
8.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 100V 160A TO-263 |
8.100 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 250µA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 130A TO-263AA |
3.168 |
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GigaMOS™, HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 65A, 10V | 4.5V @ 1mA | 130nC @ 10V | ±20V | 6600pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
6.822 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 160A HEXFET |
8.064 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220 |
6.174 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO220-3 |
5.004 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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IXYS |
200V/36A ULTRA JUNCTION X3-CLASS |
6.318 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 500µA | 21nC @ 10V | ±20V | 1425pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 100V 100A |
6.210 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206nC @ 10V | ±20V | 14800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
FET ENGR DEV-NOT REL |
6.390 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 22A (Ta), 147A (Tc) | 6V, 10V | 3.1mOhm @ 56A, 10V | 4V @ 310µA | 73nC @ 10V | ±20V | 5350pF @ 40V | - | 2.7W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8.892 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
5.418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 0.6A TO-251 |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 600mA (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 1200V 1.4A TO-220 |
5.310 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | 13Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.8nC @ 10V | ±20V | 666pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 240A D2PAK |
7.038 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 8V, 10V | 2.2mOhm @ 30A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 15400pF @ 40V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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IXYS |
MOSFET N-CH 500V 16A TO220AB |
5.274 |
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PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 330mOhm @ 8A, 10V | 4.5V @ 250µA | 43nC @ 10V | ±30V | 2530pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 75A D2PAK |
2.628 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 238nC @ 20V | ±20V | 3790pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 79A D2PAK |
3.330 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 79A (Tc) | 6V, 10V | 16mOhm @ 33A, 10V | 4V @ 250µA | 107nC @ 10V | ±20V | 5870pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET2 |
6.948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 270A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 11880pF @ 25V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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IXYS |
MOSFET N-CH 150V 90A TO-263 |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 90A (Tc) | 10V | 20mOhm @ 45A, 10V | 4.5V @ 1mA | 80nC @ 10V | ±30V | 4100pF @ 25V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |