Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 51/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23 |
201.918 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.9nC @ 10V | ±20V | 20.9pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V 0.2A TO-236AB |
55.854 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 4.5Ohm @ 100mA, 10V | 1.5V @ 250mA | 0.51nC @ 4.5V | ±20V | 47pF @ 30V | - | 300mW (Ta), 1.06W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 0.1A USM |
625.428 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 7pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 50V 0.3A SOT23 |
264.840 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 300mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.6nC @ 4.5V | ±12V | 37.1pF @ 25V | - | 520mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 30V TO-236AB |
1.189.872 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 400mA (Tc) | 1.8V, 4.5V | 1.4Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68nC @ 4.5V | ±8V | 50pF @ 15V | - | 350mW (Ta), 1.14W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 30V TO-236AB |
555.084 |
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Automotive, AEC-Q101, TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 230mA (Ta) | 2.5V, 4.5V | 4.1Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.72nC @ 4.5V | ±8V | 46pF @ 15V | - | 350mW (Ta), 1.14W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 50V TO-236AB |
731.202 |
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Automotive, AEC-Q101, TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 50V | 180mA (Ta) | 10V | 7.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 5V | ±20V | 36pF @ 25V | - | 350mW (Ta), 1.14W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V SOT883 |
226.380 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.5V, 4.5V | 150mOhm @ 1.8A, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | ±8V | 93pF @ 10V | - | 350mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 300MA SOT23 |
320.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 2Ohm @ 300mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V | ±20V | 30pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V SOT-23-3 |
74.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 500mA (Ta) | 2.5V, 4V | 1.5Ohm @ 10mA, 4V | 1.4V @ 250µA | 1.15nC @ 5V | ±20V | 21pF @ 5V | - | 690mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V 1.2A XQFN3 |
985.338 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 1.5V, 4.5V | 320mOhm @ 1.2A, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | ±8V | 46pF @ 10V | - | 350mW (Ta), 5.43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323 |
1.030.020 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 8Ohm @ 150mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19.1pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.25A SOT23-3 |
268.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 50pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.1A UMT3F |
298.746 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.5Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±12V | 7.1pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | UMT3F | SC-85 |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.1A EMT3FM |
87.918 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 3.5Ohm @ 100mA, 4.5V | 1V @ 100µA | - | ±8V | 7.1pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 100MA SMINI3 |
126.738 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±12V | 12pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-F2-B | SC-85 |
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Nexperia |
MOSFET P-CH 30V SOT323 |
29.838 |
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Automotive, AEC-Q101, TrenchMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 200mA (Ta) | 2.5V, 4.5V | 4.1Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.72nC @ 4.5V | ±8V | 46pF @ 15V | - | 260mW (Ta), 830mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 20V 1.3A 3DFN |
1.272.342 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 1.5V, 4.5V | 175mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | ±8V | 64.3pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 50V 500MA SOT23 |
774.828 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 4.5V, 10V | 1.8Ohm @ 220mA, 10V | 1.5V @ 250µA | 0.8nC @ 10V | ±20V | 40pF @ 10V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 60V TO-236AB |
2.222.274 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 1.6Ohm @ 350mA, 10V | 1.6V @ 250µA | 0.7nC @ 4.5V | ±20V | 56pF @ 10V | - | 350mW (Ta), 1.14W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 50V 0.5A SOT23 |
42.249 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 500mA (Ta) | 2.5V, 10V | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6nC @ 4.5V | ±20V | 46pF @ 25V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 0.63A SOT-323 |
660.582 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 630mA (Tc) | 2.5V, 4.5V | 550mOhm @ 630mA, 4.5V | 1.2V @ 3.5µA | 1.3nC @ 4.5V | ±12V | 115pF @ 15V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Vishay Siliconix |
MOSFET P-CH 20V 500MA PWRPAK0806 |
59.862 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 4.5V | 1.25Ohm @ 300mA, 4.5V | 900mV @ 250µA | 1nC @ 4.5V | ±8V | 31pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | PowerPAK® 0806 |
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Nexperia |
MOSFET N-CH 60V SOT323 |
617.436 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Ta) | 10V | 1.6Ohm @ 320mA, 10V | 1.6V @ 250µA | 0.7nC @ 4.5V | ±20V | 56pF @ 10V | - | 260mW (Ta), 830mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.38A |
276.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 380mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.4nC @ 4.5V | ±20V | 28.5pF @ 30V | - | 370mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 20V 200MA EMT3F |
119.778 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 4.5V | 1.2Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4nC @ 4.5V | ±10V | 115pF @ 10V | - | 150mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.5A SOT23-3 |
28.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 4.5V, 10V | 5Ohm @ 200mA, 10V | 3V @ 250µA | - | ±20V | 40pF @ 10V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 0.82A SOT323 |
24.042 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 20V | 820mA (Ta) | 1.8V, 4.5V | 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 0.62nC @ 4.5V | ±6V | 59.76pF @ 16V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 20V 230MA DFN |
1.638.474 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 230mA (Ta) | 1.5V, 4.5V | 3Ohm @ 100mA, 4.5V | 1.1V @ 250µA | - | ±10V | 14.1pF @ 15V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 1.2V DRIVE EMT3FM |
45.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 0.9V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 800mV @ 1mA | - | ±8V | 26pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3F (SOT-416FL) | SC-89, SOT-490 |