Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 106/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 650V 44A TO220 |
6.168 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78nC @ 10V | ±30V | 3090pF @ 400V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 400V 30A TO-3P |
9.504 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 4400pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET P-CH 200V 26A TO-220 |
16.392 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2740pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 28A TO-3PN |
7.056 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 175mOhm @ 14A, 10V | 5V @ 250µA | 105nC @ 10V | ±30V | 5387pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37A TO220-3 |
8.232 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 37A TO220 |
8.928 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 650V 135A PG-HDSOP-10 |
14.298 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2670pF @ 400V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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STMicroelectronics |
MOSFET N-CH 650V 32A TO247 |
6.204 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 32A (Tc) | 10V | 99mOhm @ 16A, 10V | 4V @ 250µA | 56.5nC @ 10V | ±25V | 2355pF @ 100V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A |
17.808 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2500pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 650V 15A TO-247 |
19.512 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 220mOhm @ 7.5A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1240pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A |
6.936 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
14.604 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 200V 75A TO-220 |
22.506 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 75A (Tc) | 10V | 34mOhm @ 37A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 3260pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 950V 10A TO-247 |
9.408 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 900mOhm @ 5A, 10V | 4.5V @ 100µA | 113nC @ 10V | ±30V | 3500pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 39A TO220F |
61.422 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 39A (Tc) | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 37.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 1000V 4A TO-220 |
7.938 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 6A TO220AB |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96nC @ 5V | ±20V | 2800pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 100V 76A TO-247 |
18.396 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 25mOhm @ 500mA, 10V | 4V @ 250µA | 197nC @ 10V | ±15V | 13700pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 85V 96A TO-247 |
8.784 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 96A (Tc) | 10V | 13mOhm @ 500mA, 10V | 4V @ 250µA | 180nC @ 10V | ±15V | 13100pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
8.460 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3500pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 6A D2PAK |
8.586 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95nC @ 5V | ±20V | 2650pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 26A TO-247 |
6.600 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5.5V @ 4mA | 60nC @ 10V | ±30V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-220 |
18.258 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | 1500pF @ 25V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO220-3 |
13.020 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 500V 22A TO-247 |
13.140 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5nC @ 10V | ±25V | 1973pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 21A TO-220 |
15.060 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50nC @ 10V | ±25V | 1735pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A |
8.964 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 24A TO247 |
10.584 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-3 |
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IXYS |
MOSFET N-CH 1.2KV 3A TO-263 |
8.856 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±20V | 1350pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 500V 22A TO-220 |
7.830 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 130mOhm @ 11A, 10V | 4V @ 250µA | 62.5nC @ 10V | ±25V | 1973pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |