Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 100/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 500V 18A TO-220 |
17.214 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2860pF @ 25V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2A DPAK |
19.908 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | - | 37.5nC @ 10V | ±20V | 380pF @ 30V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | TO-263-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 38A TO-262 |
17.106 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 2780pF @ 25V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 50A TO-247AC |
12.618 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 40mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | ±20V | 4057pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 110A TO-247AC |
100.092 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET L8 |
32.124 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 11560pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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STMicroelectronics |
MOSFET N-CH 400V 38A |
26.646 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 400V | 38A (Tc) | 10V | 72mOhm @ 19A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
54.744 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µ | 11nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
31.638 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 195A TO220 |
21.240 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 75A TO-220AB |
25.242 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 14mOhm @ 45A, 10V | 5.5V @ 250µA | 170nC @ 10V | ±20V | 6160pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
18.552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6920pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB |
22.002 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 50V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
19.296 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 26A TO-220FP |
33.564 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 25mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4600pF @ 25V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO220-3 |
26.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 110A D2PAK |
15.720 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 110A (Tc) | 10V | 7.5mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5595pF @ 75V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-3 |
13.698 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.3mOhm @ 100A, 10V | 4.1V @ 150µA | 102nC @ 10V | ±20V | 460pF @ 50V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 40V 120A TO220AB |
62.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 136nC @ 10V | ±20V | 9710pF @ 20V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
12.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220FP |
35.442 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 3A D2PAK |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | 1.5Ohm @ 1.5A, 0V | - | 40nC @ 5V | ±20V | 1070pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO263-3 |
18.954 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | ±20V | 14400pF @ 37.5V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 200V 30A TO-220 |
14.460 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 75mOhm @ 15A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 1597pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 400V 16A TO-220 |
16.548 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 16A (Tc) | 10V | 270mOhm @ 8A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2300pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 100A |
15.180 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4V, 10V | 5.8mOhm @ 50A, 10V | - | 280nC @ 10V | ±20V | 13200pF @ 20V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 650V 44A D2PAK |
15.912 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 70mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78nC @ 10V | ±30V | 3090pF @ 400V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO-247AC |
51.642 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220 |
15.480 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | Super Junction | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 500V 18A TO-220F |
27.924 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 60nC @ 10V | ±30V | 2860pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |