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Transistoren - Bipolar (BJT) - Single

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single
Datensätze 13.715
Seite 426/458
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Transistortyp
Strom - Kollektor (Ic) (max.)
Spannung - Kollektor-Emitter-Durchschlag (max.)
Vce-Sättigung (Max) @ Ib, Ic
Strom - Kollektorabschaltung (max.)
Gleichstromverstärkung (hFE) (min) @ Ic, Vce
Leistung - max
Frequenz - Übergang
Betriebstemperatur
Montagetyp
Paket / Fall
Lieferantengerätepaket
2SB1495,Q(J
Toshiba Semiconductor and Storage
TRANS PNP 3A 100V TO220-3
8.154
-
PNP
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SB1495,Q(M
Toshiba Semiconductor and Storage
TRANS PNP 3A 100V TO220-3
7.470
-
PNP
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SC1627A-O,PASF(M
Toshiba Semiconductor and Storage
TRANS NPN 400MA 80V TO226-3
2.124
-
NPN
400mA
80V
400mV @ 20mA, 200A
100nA (ICBO)
70 @ 50mA, 2V
800mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC1627A-Y,PASF(M
Toshiba Semiconductor and Storage
TRANS NPN 400MA 80V TO226-3
2.430
-
NPN
400mA
80V
400mV @ 20mA, 200A
100nA (ICBO)
70 @ 50mA, 2V
800mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229(TE6SAN1F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5.058
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(MIT1F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7.218
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(MITIF,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
4.068
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(SHP,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6.984
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(SHP1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7.020
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6MIT1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6.948
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6SAN2FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6.768
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(T6SHP1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5.256
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-O(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5.616
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(MIT,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
3.526
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(MIT1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8.334
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7.668
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SHP,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8.640
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(SHP1,F,M
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
3.490
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6MIT1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
5.274
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6MITIFM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
7.344
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6ONK1FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
6.210
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(T6SAN2FM
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8.388
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y(TE6,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
2.880
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2229-Y,F(J
Toshiba Semiconductor and Storage
TRANS NPN 50MA 150V TO226-3
8.928
-
NPN
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235(T6KMAT,F,M
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
7.920
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(FA1,F,M)
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
6.012
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6ASN,FM
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
8.982
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6FJT,AF
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
2.844
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O(T6FJT,FM
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
7.200
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SC2235-O,F(J
Toshiba Semiconductor and Storage
TRANS NPN 800MA 120V TO226-3
4.392
-
NPN
800mA
120V
1V @ 50mA, 500mA
100nA (ICBO)
80 @ 100mA, 5V
900mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD