PMIC - Gate-Treiber
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
Datensätze 5.436
Seite 83/182
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
IC MOSFET DVR 2A HS INV 8DIP |
4.716 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 2A, 2A | Inverting | - | 18ns, 18ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Analog Devices |
IC MOSFET DRIVER DUAL 12V 8SOIC |
5.616 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.15V ~ 13.2V | 0.8V, 2V | - | Non-Inverting | - | 20ns, 16ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8MSOP |
6.696 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 1V, 2.3V | 5A, 5A | Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
|
|
Texas Instruments |
IC GATE DVR LO-SIDE DL 5A 8MSOP |
7.668 |
|
- | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 1V, 2.3V | 5A, 5A | Inverting, Non-Inverting | - | 7ns, 6ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
|
|
ON Semiconductor |
IC GATE DRIVER HI LOW SIDE 14SOP |
2.574 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
|
|
IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8DIP |
2.646 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
|
|
IXYS Integrated Circuits Division |
IC HIGH SIDE DRIVER 8SOIC |
7.668 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
IXYS Integrated Circuits Division |
IC MOSFET/IGBT DVR 600V 8-SOIC |
6.534 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 12V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 23ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 16SO |
6.174 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 500V | 15ns, 13ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A TTL 8SOIC |
2.106 |
|
Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A CMOS 8-SOIC |
5.958 |
|
Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | - | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
ON Semiconductor |
IC GATE DVR SGL 9A HS INV 8-SOIC |
2.394 |
|
Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 2A HS 8SOIC |
5.256 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 18ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 2A HS INV 8SOIC |
5.184 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 2A, 2A | Inverting | - | 18ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A HS INV 8SOIC |
3.024 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 3A, 3A | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A HS 8SOIC |
8.532 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A HS 8SOIC |
5.742 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A HS INV 8SOIC |
6.120 |
|
- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 16V | 0.8V, 2V | 3A, 3A | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR DUAL-NON 4A 8MSOP |
8.766 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8-SOIC |
8.496 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8-SOIC |
6.930 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Renesas Electronics America Inc. |
IC DRVR MOSFET DUAL-CH 8-SOIC |
3.436 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSF DRIVER 1PH SYNCH 8TQFN |
2.412 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.2V ~ 5.5V | - | 2.2A, 2.7A | Non-Inverting | - | 10ns, 8ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WQFN Exposed Pad | 8-TQFN-EP |
|
|
STMicroelectronics |
IC DRVR HALF BRDG HV W/OSC 8SOIC |
6.444 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 16.6V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
STMicroelectronics |
IC DRVR HALF BRDG HV W/OSC 8SOIC |
2.952 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 16.6V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8DIP |
5.652 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 85V HALF BRDG |
8.172 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5V ~ 16V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) |
|
|
Renesas Electronics America Inc. |
IC DRIVER HALF-BRIDGE 12-DFN |
7.704 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 14V | 1.63V, 2.06V | 1A, 1A | Non-Inverting | 60V | 8ns, 2ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) |
|
|
Monolithic Power Systems Inc. |
100V, 4A, HIGH FREQUENCY HALF-BR |
7.578 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 12V | 1V, 2.4V | 2.5A, 2.5A | Non-Inverting | 115V | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Diodes Incorporated |
IC GATE DRVR HALF-BRDG 14SO 2.5K |
8.748 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO |