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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 941/1165
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
CD1005-S01575
Bourns
DIODE GEN PURP 75V 150MA 1005
5.778
-
Standard
75V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
2.5µA @ 75V
4pF @ 1V, 100MHz
Surface Mount
1005 (2512 Metric)
1005
-40°C ~ 125°C
CD1005-S0180R
Bourns
DIODE GEN PURP 80V 100MA 1005
3.222
-
Standard
80V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 80V
4pF @ 1V, 100MHz
Surface Mount
1005 (2512 Metric)
1005
-40°C ~ 125°C
CD0603-S0180R
Bourns
DIODE GEN PURP 80V 100MA 0603
6.066
-
Standard
80V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
50nA @ 75V
4pF @ 1V, 100MHz
Surface Mount
0603 (1608 Metric)
0603
-40°C ~ 125°C
CD0603-S0180
Bourns
DIODE GEN PURP 80V 100MA 0603
4.896
-
Standard
80V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 80V
4pF @ 1V, 100MHz
Surface Mount
0603 (1608 Metric)
0603
-40°C ~ 125°C
CD1005-B00340
Bourns
DIODE SCHOTTKY 40V 30MA 1005
4.842
-
Schottky
40V
30mA
370mV @ 1mA
Small Signal =< 200mA (Io), Any Speed
-
1µA @ 40V
1.5pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005
-40°C ~ 125°C
DLE30C
ON Semiconductor
DIODE GEN PURP 200V 3A AXIAL
7.938
-
Standard
200V
3A
980mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
Axial
150°C (Max)
DLE30C-KC9
ON Semiconductor
DIODE GEN PURP 200V 3A AXIAL
5.184
-
Standard
200V
3A
980mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
Axial
150°C (Max)
DLE30E
ON Semiconductor
DIODE GEN PURP 400V 3A AXIAL
3.834
-
Standard
400V
3A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
20µA @ 400V
-
Through Hole
DO-201AD, Axial
Axial
150°C (Max)
DLM10C
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
4.914
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DLM10C-AT1
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
7.758
-
Standard
200V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DLM10E
ON Semiconductor
DIODE GEN PURP 400V 1A DO204AL
5.886
-
Standard
400V
1A
980mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DS135AC
ON Semiconductor
DIODE GEN PURP 400V 1A DO204AL
3.996
-
Standard
400V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DS135AD
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
2.484
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DS135AE
ON Semiconductor
DIODE GEN PURP 100V 1A DO204AL
3.906
-
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSA17G
ON Semiconductor
DIODE GEN PURP 600V 1.7A AXIAL
5.850
-
Standard
600V
1.7A
1.05V @ 1.7A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
Axial
-
150°C (Max)
DSA26G
ON Semiconductor
DIODE GEN PURP 600V 2.6A AXIAL
8.118
-
Standard
600V
2.6A
1.05V @ 2.6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
-
Through Hole
Axial
-
150°C (Max)
DSF10TB
ON Semiconductor
DIODE GEN PURP 100V 1A DO204AL
5.688
-
Standard
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSF10TC
ON Semiconductor
DIODE GEN PURP 200V 1A DO204AL
6.282
-
Standard
200V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
DSK10B
ON Semiconductor
DIODE GEN PURP 100V 1A AXIAL
8.892
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
Axial
-
150°C (Max)
DSK10C
ON Semiconductor
DIODE GEN PURP 200V 1A AXIAL
8.136
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
R-1, Axial
-
150°C (Max)
DSK10E
ON Semiconductor
DIODE GEN PURP 400V 1A AXIAL
5.472
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
R-1, Axial
-
150°C (Max)
RD0106T-H
ON Semiconductor
DIODE GEN PURP 600V 1A TP
3.276
-
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
150°C (Max)
RD0504T-H
ON Semiconductor
DIODE GEN PURP 400V 5A TP
3.042
-
Standard
400V
5A
1.5V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
20µA @ 400V
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
150°C (Max)
RD0506T-H
ON Semiconductor
DIODE GEN PURP 600V 5A TP
8.748
-
Standard
600V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
150°C (Max)
SB10-03A2
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
7.992
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
150°C (Max)
SB10-03A3
ON Semiconductor
DIODE SCHOTTKY 30V 1A DO41
6.750
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A2
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
4.284
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
SB10-05A3
ON Semiconductor
DIODE SCHOTTKY 50V 1A DO41
7.722
-
Schottky
50V
1A
580mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1mA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
125°C (Max)
UD0506T-H
ON Semiconductor
DIODE GEN PURP 600V 5A TP
3.492
-
Standard
600V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 600V
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
TP
150°C (Max)
DLA11C-TR-E
ON Semiconductor
DIODE GEN PURP 200V 1.1A 2SMD
5.580
-
Standard
200V
1.1A
980mV @ 1.1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Surface Mount
2-SMD, J-Lead
SMD
150°C (Max)