Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 87/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE SCHOTTKY 600V 10A TO220AC |
6.264 |
|
- | Silicon Carbide Schottky | 600V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 650pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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|
Microsemi |
DIODE GEN PURP 1KV 30A TO247 |
13.938 |
|
- | Standard | 1000V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 290ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 30A TO220AC |
12.174 |
|
- | Standard | 1200V | 30A | 2.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 25.5A TO252 |
30.156 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 25.5A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 395pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 100A POWIRTA |
4.650 |
|
- | Schottky | 100V | 100A | 1.04V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6.672 |
|
- | Standard | 600V | 60A | 1.8V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1KV 60A TO247AD |
8.568 |
|
- | Standard | 1000V | 60A | 2.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3mA @ 1000V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A TO247-3 |
8.076 |
|
- | Standard | 600V | 150A (DC) | 2V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 52A TO247AD |
16.926 |
|
- | Standard | 1200V | 52A | 2.55V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 2.2mA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 600V 12A TO220AC |
7.512 |
|
- | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 750pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 80A TO247-2 |
7.740 |
|
Automotive, AEC-Q101 | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 30A DOP3I |
13.440 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
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|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
16.380 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.6V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 25A DO203AA |
8.748 |
|
- | Standard | 400V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 60A TO247AC |
6.847 |
|
- | Standard | 800V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 10A TO220-2 |
17.148 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 30A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A TO247AC |
192 |
|
- | Standard | 600V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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STMicroelectronics |
DIODE GEN PURP 600V 60A DO247 |
21.834 |
|
- | Standard | 600V | 60A | 1.55V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
252 |
|
- | Standard | 400V | 60A | 1.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 12A TO220-2-1 |
12.252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
90 |
|
- | Standard | 1200V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
11.028 |
|
- | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
20.694 |
|
FRED Pt® | Standard | 200V | 60A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
214 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 200V 3A AXIAL |
6.696 |
|
- | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | Axial | B, Axial | -65°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
16.980 |
|
- | Standard | 1200V | 60A | 2.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 30µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 35A TO220-2 |
12.528 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 35A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 74µA @ 650V | 641.5pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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|
Littelfuse |
DIODE SCHOTTKY 1.2KV 28A TO220-2 |
12.600 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 28A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 800V 1A AXIAL |
151 |
|
- | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
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|
IXYS |
DIODE GEN PURP 600V 77A TO247AD |
7.362 |
|
FRED | Standard | 600V | 77A | 1.3V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3mA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |