Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 852/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 300V 1A AXIAL |
8.532 |
|
SWITCHMODE™ | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 300V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 1A AXIAL |
3.924 |
|
SWITCHMODE™ | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
6.498 |
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SWITCHMODE™ | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 15A TO220-2 |
7.614 |
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SWITCHMODE™ | Standard | 150V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
4.824 |
|
SWITCHMODE™ | Standard | 800V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 20A TO220AC |
8.514 |
|
SWITCHMODE™ | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6.426 |
|
SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
8.532 |
|
SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
2.700 |
|
SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6.210 |
|
SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
6.138 |
|
SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
7.614 |
|
SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
7.128 |
|
SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
5.490 |
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SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
3.438 |
|
SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
7.902 |
|
SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 4A DO201AD |
7.218 |
|
SWITCHMODE™ | Standard | 100V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 4A DO201AD |
5.220 |
|
SWITCHMODE™ | Standard | 1000V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 4A DO201AD |
5.562 |
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SWITCHMODE™ | Standard | 150V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 4A DO201AD |
8.586 |
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SWITCHMODE™ | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 4A DO201AD |
3.330 |
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SWITCHMODE™ | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 4A DO201AD |
7.578 |
|
SWITCHMODE™ | Standard | 520V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 4A DO201AD |
3.276 |
|
SWITCHMODE™ | Standard | 520V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 4A DO201AD |
2.196 |
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SWITCHMODE™ | Standard | 520V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 4A DO201AD |
2.844 |
|
SWITCHMODE™ | Standard | 520V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 4A DO201AD |
3.852 |
|
SWITCHMODE™ | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 4A AXIAL |
6.606 |
|
SWITCHMODE™ | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 900V 4A DO201AD |
2.142 |
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SWITCHMODE™ | Standard | 900V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 900V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 5A DO201AD |
7.470 |
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SWITCHMODE™ | Standard | 520V | 5A | 1.15V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 5A DO201AD |
5.022 |
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SWITCHMODE™ | Standard | 520V | 5A | 1.15V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |