Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 83/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A TO220-2 |
48.804 |
|
SWITCHMODE™ | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE RECT 100V 20A TO220FP |
15.282 |
|
- | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FP | 175°C (Max) |
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Microsemi |
DIODE SCHOTTKY 100V 8A DO214AB |
26.832 |
|
- | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 600V 9A TO220F |
33.312 |
|
- | Standard | 600V | 9A | 1.26V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F |
24.798 |
|
- | Standard | 600V | 10A | 2.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F |
25.554 |
|
- | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO220AC |
17.184 |
|
- | Schottky | 60V | 7.5A | 750mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
39.852 |
|
SWITCHMODE™ | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 16A TO220-2 |
23.916 |
|
SWITCHMODE™ | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 15A TO220-2 |
218.310 |
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SWITCHMODE™ | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 8A TO220AC |
52.476 |
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SWITCHMODE™ | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
35.934 |
|
- | Schottky | 45V | 10A | 800mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220-2 |
24.246 |
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SWITCHMODE™ | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 5A TO220FP |
13.152 |
|
- | Standard | 600V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 10A TLM364 |
42.012 |
|
- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | 3-SMD, Flat Leads | TLM364 | -65°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2A TO252-2 |
498 |
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Z-Rec® | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 120pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2A TO220-2 |
34.902 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 120pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A ITO220AC |
17.526 |
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TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | 200°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1KV 8A D2PAK |
24.174 |
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- | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 100V 30A SMC |
55.740 |
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- | Schottky | 100V | 30A | 850mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | Z5-T | SMC (Z5-T) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 8A TO220-2 |
43.182 |
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SWITCHMODE™ | Standard | 1000V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 2A TO252-2 |
37.752 |
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Z-Rec® | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 120pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2.2A TO220-2 |
47.478 |
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Zero Recovery™ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 80pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 200V 14A TO220AC |
30.612 |
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- | Standard | 200V | 14A | 1.05V @ 14A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
15.102 |
|
SWITCHMODE™ | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 45V 10A TO220AC |
13.128 |
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- | Schottky | 45V | 10A | 600mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO220AC |
31.920 |
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- | Standard | 1200V | 8A | 3.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
18.012 |
|
- | Standard | 1200V | 8A | 2.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE RECT 100V 40A TO220AB |
21.420 |
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- | FERD (Field Effect Rectifier Diode) | 100V | 40A | 705mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 190µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 120V 30A POWRFLAT |
28.980 |
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- | Schottky | 120V | 30A | 920mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 120V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |