Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 565/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE GEN PURP 100V 200MA SOT323 |
2.952 |
|
- | Standard | 100V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 100V TO-263AB |
8.676 |
|
- | Schottky | 100V | 20A | 1.07V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 10A TO220AC |
7.722 |
|
- | Standard | 300V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 10A TO262AA |
4.734 |
|
TMBS® | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 15A TO277A |
7.902 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 15A (DC) | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A TO277A |
3.276 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 100V ITO220AB |
5.238 |
|
- | Schottky | 100V | 20A | 1.07V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -40°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
3.906 |
|
- | Standard | 1200V | - | 2.6V @ 15A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
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Diodes Incorporated |
DIODE SBR 45V 12A POWERDI5SP |
3.474 |
|
- | Super Barrier | 45V | 12A | 520mV @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | PowerDI™ 5SP | PowerDI5SP™ | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 20A TO220AB |
7.110 |
|
- | Schottky | 35V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 20A TO220AB |
3.528 |
|
- | Schottky | 45V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
4.752 |
|
- | Schottky | 45V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
7.362 |
|
- | Standard | 100V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Nexperia |
DIODE SCHOTTKY 50V 15A CFP15 |
6.894 |
|
Automotive, AEC-Q101 | Schottky | 50V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 50V | 800pF @ 10V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V ITO-220AB |
2.934 |
|
- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO220AB |
4.752 |
|
- | Standard | 200V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A |
7.956 |
|
eSMP® | Schottky | 30V | 12A | 600mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
3.870 |
|
- | Standard | 1200V | - | 2.6V @ 15A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
8.208 |
|
- | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
2.754 |
|
- | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
6.066 |
|
- | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
4.824 |
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- | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO263AB |
7.182 |
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- | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO263AB |
8.550 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 2A DO15 |
5.616 |
|
- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 12A 5DFN |
8.262 |
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- | Schottky | 40V | 12A | 680mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 25A P2500 |
7.614 |
|
Automotive, AEC-Q101 | Standard | - | 25A | 870mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
5.598 |
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- | Standard | 100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A ITO220AC |
8.406 |
|
- | Standard | 200V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 30V 1A DO214AA |
6.246 |
|
- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |