Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 542/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 5K |
3.834 |
|
- | Schottky | 100V | 15A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 8A 100V SO8FL |
6.966 |
|
Automotive, AEC-Q101 | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
2.898 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6.984 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Sanken |
DIODE SCHOTTKY SMD |
6.192 |
|
- | Schottky | 30V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 2A SMD |
2.880 |
|
- | Schottky | 30V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY SMD |
6.426 |
|
- | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 30V 2A SMD |
8.766 |
|
- | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 3A 2SMD |
4.410 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 3A SJP |
4.770 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 20V DO-214AB |
2.466 |
|
- | Schottky | 20V | 8A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 30V DO-214AB |
3.834 |
|
- | Schottky | 30V | 8A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 40V DO-214AB |
2.100 |
|
- | Schottky | 40V | 8A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 8A 50V DO-214AB |
5.868 |
|
- | Schottky | 50V | 8A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
4.248 |
|
eSMP® | Avalanche | 800V | 1.6A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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|
|
SMC Diode Solutions |
DIODE GEN PURP 200V 15A D2PAK |
7.650 |
|
- | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 10A TO277A |
7.002 |
|
eSMP® | Schottky | 90V | 10A | 880mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 90V | 270pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
7.416 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
RECTIFIER 200V 8A |
3.490 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A DO201AD |
6.588 |
|
Automotive, AEC-Q101 | Schottky | 100V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
3.546 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 20V DO-214AB |
6.516 |
|
- | Schottky | 20V | 4A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 30V DO-214AB |
4.932 |
|
- | Schottky | 30V | 4A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 20V DO-214AB |
4.608 |
|
- | Schottky | 20V | 4A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220 |
3.744 |
|
eSMP® | Avalanche | 100V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220 |
4.770 |
|
eSMP® | Avalanche | 100V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A DO220 |
6.012 |
|
eSMP® | Avalanche | 200V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 200V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A DO220 |
4.194 |
|
eSMP® | Avalanche | 400V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 400V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A DO220 |
3.492 |
|
eSMP® | Avalanche | 400V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 400V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A DO220 |
2.214 |
|
eSMP® | Avalanche | 600V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |