Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 495/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
5.562 |
|
- | Standard | 200V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
3.906 |
|
- | Standard | 800V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
4.194 |
|
eSMP® | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
4.716 |
|
Automotive, AEC-Q101 | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
3.114 |
|
Automotive, AEC-Q101 | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
8.298 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 2A 6MCPH |
6.840 |
|
- | Schottky | 30V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 1.25mA @ 15V | 75pF @ 10V, 1MHz | Surface Mount | 6-SMD, Flat Leads | 6-MCPH | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
4.860 |
|
Automotive, AEC-Q101 | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB |
3.654 |
|
- | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 150V 1A PMDU |
5.922 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 150V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO214AB |
7.758 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO214AB |
4.320 |
|
Automotive, AEC-Q101 | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AB |
7.326 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AB |
8.730 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 40V 3A DO214AB |
8.100 |
|
Automotive, AEC-Q101 | Standard | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
5.382 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
5.598 |
|
Automotive, AEC-Q101 | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
2.952 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 5A 5DFN |
2.178 |
|
- | Schottky | 40V | 5A | 580mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
5.022 |
|
- | Avalanche | 600V | 2A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 500MA AXIAL |
6.552 |
|
- | Standard | 800V | 500mA | 2V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 500MA AXIAL |
3.600 |
|
- | Standard | 800V | 500mA | 2V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 500MA AXIAL |
6.372 |
|
- | Standard | 800V | 500mA | 2V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
5.832 |
|
- | Standard | 600V | 500mA | 1.8V @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
2.664 |
|
- | Standard | 600V | 500mA | 1.8V @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 600V 500MA AXIAL |
8.568 |
|
- | Standard | 600V | 500mA | 1.8V @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 600V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 1A AXIAL |
8.244 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 1A AXIAL |
4.752 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 1A AXIAL |
2.898 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
4.968 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |