Gleichrichter - Single

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 377/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
1N5406-G	Comchip Technology	DIODE GEN PURP 600V 3A DO201AD	8.424	-	Standard	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
1N5407-G	Comchip Technology	DIODE GEN PURP 800V 3A DO201AD	8.604	-	Standard	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
1N5400T-G	Comchip Technology	DIODE GEN PURP 50V 3A DO201AD	2.034	-	Standard	50V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
1N5402T-G	Comchip Technology	DIODE GEN PURP 200V 3A DO201AD	8.136	-	Standard	200V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
1N5406T-G	Comchip Technology	DIODE GEN PURP 600V 3A DO201AD	6.786	-	Standard	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-27 (DO-201AD)	-65°C ~ 125°C
HS1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	3.636	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS1F R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	4.428	-	Standard	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	3.454	-	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NRVTSAF360T3G	ON Semiconductor	DIODE SCHOTTKY 60V 3A SMA-FL	2.196	Automotive, AEC-Q101	Schottky	60V	3A	780mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-55°C ~ 175°C
SFT15G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	7.794	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	3.708	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6.498	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	7.416	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	5.022	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	6.876	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	5.760	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
NSVBAS116LT3G	ON Semiconductor	DIODE GEN PURP 75V 200MA SOT23-3	8.802	Automotive, AEC-Q101	Standard	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	3µs	5nA @ 75V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
RB162M-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A PMDU	7.164	-	Schottky	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SOD-123F	SOD-123FL	150°C (Max)
VS-10MQ040-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.5A DO214AC	6.912	-	Schottky	40V	1.5A	620mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
VS-10MQ060-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1.5A DO214AC	6.732	-	Schottky	60V	1A	710mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	31pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
VS-20MQ040-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 40V SMA	4.932	-	Schottky	40V	2A	690mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	38pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-20MQ060-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO214AC	8.334	-	Schottky	60V	2A	780mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	31pF @ 10V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SF2L4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2.286	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF2L6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	2.610	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
B1100AE-13	Diodes Incorporated	DIODE SCHOTTKY 100V 1A SMA	2.124	-	Schottky	100V	1A	790mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	27pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
ES1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	3.366	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAS45A,143	Nexperia	DIODE GEN PURP 125V 250MA DO34	7.398	-	Standard	125V	250mA (DC)	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1nA @ 125V	4pF @ 0V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	DO-34	175°C (Max)
US1BFA	ON Semiconductor	DIODE GEN PURP 100V 1A SOD123FA	4.896	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
US1KFA	ON Semiconductor	DIODE GEN PURP 800V 1A SOD123FA	3.672	Automotive, AEC-Q101	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
GP10N-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.1KV 1A DO204AL	3.168	SUPERECTIFIER®	Standard	1100V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1100V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C

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