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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 322/1165
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Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
S1FLB-GS18
Vishay Semiconductor Diodes Division
DIODE GP 100V 700MA DO219AB
3.636
-
Standard
100V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 100V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
S1FLD-GS18
Vishay Semiconductor Diodes Division
DIODE GP 200V 700MA DO219AB
6.750
-
Standard
200V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
S1FLG-GS18
Vishay Semiconductor Diodes Division
DIODE GP 400V 700MA DO219AB
3.598
-
Standard
400V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
S1FLJ-GS18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO219AB
5.346
-
Standard
600V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
BAT86S-TAP
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 200MA DO35
5.238
Automotive, AEC-Q101
Schottky
50V
200mA (DC)
900mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
8pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
BAT86S-TR
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 200MA DO35
2.322
Automotive, AEC-Q101
Schottky
50V
200mA (DC)
900mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
5µA @ 40V
8pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
125°C (Max)
GPP10A-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO204AL
3.492
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
GPP10B-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO204AL
5.598
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
GPP10D-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL
8.910
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
GPP10G-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL
7.776
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
GPP10J-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL
7.794
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
GPP10M-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
7.596
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S1AL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
5.292
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3.816
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
4.968
-
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2.934
Automotive, AEC-Q101
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5.040
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
6.876
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
5.130
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
2.556
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JL RQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
8.028
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JLHRQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
8.568
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
CDSUR4148-HF
Comchip Technology
DIODE GEN PURP 75V 150MA 0603
6.390
-
Standard
75V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
2.5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
0603/SOD-523F
125°C (Max)
S1KFP
ON Semiconductor
DIODE GP 800V 1.2A SOD-123HE
7.812
Automotive, AEC-Q101
Standard
800V
1.2A
1.3V @ 1.2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
5µA @ 800V
18pF @ 0V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
S1FLD-M-08
Vishay Semiconductor Diodes Division
DIODE GP 200V 700MA DO219AB
7.938
-
Standard
200V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
S1FLG-M-08
Vishay Semiconductor Diodes Division
DIODE GP 400V 700MA DO219AB
5.544
-
Standard
400V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 400V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
S1FLJ-M-08
Vishay Semiconductor Diodes Division
DIODE GP 600V 700MA DO219AB
3.490
-
Standard
600V
700mA
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 600V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
SBRA401T3G
ON Semiconductor
DIODE SCHOTTKY SMA
8.784
*
-
-
-
-
-
-
-
-
-
-
-
-
BA159GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
7.074
Automotive, AEC-Q101
Standard
-
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
BAS19W RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 200MA SOT323
5.976
-
Standard
100V
200mA
1.25V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 100V
5pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 150°C