Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 297/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
VS-1N3893	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 12A DO203AA	7.542	-	Standard	400V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	25µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
2833770	Phoenix Contact	DIODE MODULE 12-24VDC IN	6.060	-	-	-	-	-	-	-	-	-	Pluggable into DIN Rail Base	Module	Module	-
VS-40HFR100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 40A DO203AB	3.744	-	Standard, Reverse Polarity	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
VS-85HFR40	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 85A DO203AB	8.352	-	Standard, Reverse Polarity	400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
CDLL5195	Microsemi	DIODE GEN PURP 180V 200MA DO213	8.316	-	Standard	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
VS-70HFR140	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 70A DO203AB	8.208	-	Standard, Reverse Polarity	1400V	70A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	4.5mA @ 1400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
S40Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 40A DO5	7.506	-	Standard	1200V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
VS-80APS08-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 80A TO247AC	10.490	-	Standard	800V	80A	1.17V @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 800V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
VS-40HFL100S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 40A DO203AB	8.262	-	Standard	1000V	40A	1.95V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
VS-70HFLR60S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 70A DO203AB	111	-	Standard, Reverse Polarity	600V	70A	1.85V @ 219.8A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
1N6095R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 30V DO4	4.356	-	Schottky, Reverse Polarity	30V	25A	580mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-70HF120M	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 70A DO203AB	14	-	Standard	1200V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
UES1104	Microsemi	DIODE GEN PURP 200V 1A AXIAL	3.042	-	Standard	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
UES1305	Microsemi	DIODE GEN PURP 300V 3A AXIAL	542	-	Standard	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 300V	-	Through Hole	B, Axial	-	-55°C ~ 150°C
122NQ030R-1	SMC Diode Solutions	DIODE SCHOTTKY 30V 120A PRM1-1	7.974	-	Schottky	30V	120A	490mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 30V	7400pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
VS-240UR80D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 320A DO205AB	4.680	-	Standard, Reverse Polarity	800V	320A	1.33V @ 750A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
VS-400UR80D	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 400A DO205AB	176	-	Standard, Reverse Polarity	800V	400A	1.62V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 800V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 200°C
RS1KTR	SMC Diode Solutions	DIODE GEN PURP 800V 1A SMA	3.204	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
RS1JTR	SMC Diode Solutions	DIODE GEN PURP 600V 1A SMA	4.878	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
BAS21-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 200MA SOT23	5.922	-	Standard	200V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
BAS16THVL	Nexperia	BAS16TH/SOT23/TO-236AB	2.556	Automotive, AEC-Q101, BAS16	Standard	100V	215mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	500nA @ 80V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	175°C (Max)
R2000FTA	SMC Diode Solutions	DIODE GEN PURP 2KV 200MA DO41	4.248	-	Standard	2000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	500ns	5µA @ 2000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
BAV19WTR	SMC Diode Solutions	DIODE GEN PURP 100V 200MA SOD123	4.500	-	Standard	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
CUS357,H3F	Toshiba Semiconductor and Storage	SMALL SIGNAL SCHOTTKY BARRIER DI	4.788	-	Schottky	40V	100mA	600mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	11pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
1SS406,H3F	Toshiba Semiconductor and Storage	SMALL SIGNAL SCHOTTKY BARRIER DI	4.878	*	-	-	-	-	-	-	-	-	-	-	-	-
1SS385FV,L3F	Toshiba Semiconductor and Storage	SMALL-SIGNAL SCHOTTKY BARRIER DI	5.562	*	-	-	-	-	-	-	-	-	-	-	-	-
S1BBTR	SMC Diode Solutions	DIODE GEN PURP 100V 1A SMB	6.822	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
IMBD4448-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23	5.292	Automotive, AEC-Q101	Standard	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
BAV116W-TP	Micro Commercial Co	350MWSWITCHINGDIODESOD-123	4.860	-	Standard	130V	215mA	1.25V @ 150mA	Standard Recovery >500ns, > 200mA (Io)	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1SS400SMFHT2R	Rohm Semiconductor	SWITCHING DIODES (CORRESPONDS TO	6.930	Automotive, AEC-Q101	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 500mV, 1MHz	Surface Mount	SC-79, SOD-523	EMD2	150°C (Max)

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