Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 112/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 400V 3A DPAK |
19.614 |
|
SWITCHMODE™ | Standard | 400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
48.318 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
75.648 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
44.502 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
26.034 |
|
- | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 50V | 150pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 3A DO201AD |
142.494 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
30.438 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 36pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 10A TO252 |
19.878 |
|
Automotive, AEC-Q101 | Super Barrier | 60V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A TO277A |
48.468 |
|
- | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A 8PDFN |
15.930 |
|
- | Schottky | 60V | 20A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 2A SMB |
3.934 |
|
Q Automotive | Standard | 200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB | 175°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
13.314 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A SOD123F |
58.248 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 3A SOD64 |
54.648 |
|
- | Avalanche | 1000V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO214AB |
16.800 |
|
- | Schottky | 60V | 8A | 750mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5 |
13.698 |
|
TrenchSBR | Super Barrier | 60V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 100V 12A TO277B |
100.374 |
|
- | Schottky | 100V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
52.164 |
|
Automotive, AEC-Q101 | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 25A 8PDFN |
13.572 |
|
- | Schottky | 60V | 25A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO201AD |
25.416 |
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SUPERECTIFIER® | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 48pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A |
13.722 |
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eSMP® | Schottky | 30V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 30A SMPD |
21.738 |
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eSMP®, TMBS® | Schottky | 45V | 30A (DC) | 650mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | SMPD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 30A TO263AC |
20.076 |
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eSMP®, TMBS® | Schottky | 45V | 30A | 650mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
77.982 |
|
eSMP® | Avalanche | 1000V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
56.334 |
|
- | Avalanche | 800V | 3A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
17.604 |
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SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
21.306 |
|
FRED Pt® | Standard | 600V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A DPAK |
52.410 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
23.544 |
|
SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 400V 6A TO252 |
22.662 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |