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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 1061/1165
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
SFAS805GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 8A TO263AB
2.970
Automotive, AEC-Q101
Standard
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS806G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO263AB
6.120
-
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS806GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 8A TO263AB
3.942
Automotive, AEC-Q101
Standard
400V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS807G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO263AB
3.582
-
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS807GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 8A TO263AB
7.560
Automotive, AEC-Q101
Standard
500V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS808G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO263AB
4.482
-
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFAS808GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO263AB
7.236
Automotive, AEC-Q101
Standard
600V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1001G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO263AB
8.676
-
Standard
50V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 50V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1001GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO263AB
3.096
Automotive, AEC-Q101
Standard
50V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 50V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1002G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO263AB
6.066
-
Standard
100V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 100V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1002GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A TO263AB
8.676
Automotive, AEC-Q101
Standard
100V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 100V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1003G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO263AB
7.830
-
Standard
150V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 150V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1003GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A TO263AB
7.650
Automotive, AEC-Q101
Standard
150V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 150V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1004G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO263AB
6.732
-
Standard
200V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 200V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1004GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO263AB
5.814
Automotive, AEC-Q101
Standard
200V
10A
975mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 200V
70pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1005G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO263AB
6.462
-
Standard
300V
10A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 300V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1005GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 10A TO263AB
6.984
Automotive, AEC-Q101
Standard
300V
10A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 300V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1006G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO263AB
6.048
-
Standard
400V
10A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1007G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO263AB
7.470
-
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 500V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1007GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 10A TO263AB
6.246
Automotive, AEC-Q101
Standard
500V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 500V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1008G MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
6.732
-
Standard
600V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SFS1008GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO263AB
2.466
Automotive, AEC-Q101
Standard
600V
10A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2050 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 20A TO263AB
3.708
-
Schottky
50V
20A
700mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2050HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 20A TO263AB
3.402
Automotive, AEC-Q101
Schottky
50V
20A
700mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2060 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 20A TO263AB
7.164
-
Schottky
60V
20A
700mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2060HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 20A TO263AB
4.176
Automotive, AEC-Q101
Schottky
60V
20A
700mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2090 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 20A TO263AB
8.136
-
Schottky
90V
20A
920mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS2090HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 20A TO263AB
8.892
Automotive, AEC-Q101
Schottky
90V
20A
920mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS8150 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A TO263AB
4.770
-
Schottky
150V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS8150HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A TO263AB
5.112
Automotive, AEC-Q101
Schottky
150V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C