Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 1052/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
S1KLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	6.138	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1KLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	2.196	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ML MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	6.498	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1MLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	6.786	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
SS110L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	6.840	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	3.870	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	8.460	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	5.328	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	7.236	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	7.182	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	3.114	Automotive, AEC-Q101	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS12L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	8.478	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	4.338	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	7.884	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	2.952	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	6.606	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	2.484	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	2.106	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	5.796	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	4.878	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	5.472	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	3.780	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	2.142	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS15L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	3.690	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	3.348	-	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	3.672	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	3.168	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16L M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	4.536	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16L MHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	7.830	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	2.070	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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