Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 1040/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE |
2.538 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
4.536 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
5.220 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
8.406 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
3.418 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
4.284 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
7.488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO220-2 |
1.559 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO252 |
3.726 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 58A TO247-2 |
5.605 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 58A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | - | 200µA @ 650V | 1054pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTKY 1.2KV 182A TO247-2 |
8.406 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 182A (DC) | 1.8V @ 60A | No Recovery Time > 500mA (Io) | - | 500µA @ 1200V | 3809pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 125V 200MA DO35 |
4.644 |
|
- | Standard | 125V | 200mA | 1.15V @ 300mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 3nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 2A SOD123F |
2.556 |
|
- | Schottky | 60V | 2A | 760mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 8pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
8.568 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
7.452 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
3.708 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
4.248 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHTKY 30V 200MA MINI MELF |
2.682 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 10pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | Mini MELF | 125°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SMA-FL |
4.086 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMA-FL | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123FL |
6.786 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A MELF |
4.212 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A MELF |
5.490 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A MELF |
4.014 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A MELF |
6.606 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A MELF |
4.500 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 1A MELF |
3.996 |
|
- | Standard | - | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO204AL |
4.032 |
|
- | Standard | 50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO204AL |
2.556 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
3.510 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
3.436 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |