Rohm Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerRohm Semiconductor
Datensätze 774
Seite 6/26
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 5A TO-220-2 |
15.996 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.6V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO-220-2 |
14.988 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 10A TO220AC |
12.420 |
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- | Silicon Carbide Schottky | 600V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 430pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO-220-2 |
4.212 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 15A (DC) | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SILICON 650V 15A TO247 |
10.044 |
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- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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Rohm Semiconductor |
DIODE SILICON 650V 20A TO247 |
8.508 |
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- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 15A TO220AC |
560 |
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- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.6V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 1200V | 790pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 20A TO220-2 |
1.466 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.6V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1060pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDTM |
23.346 |
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- | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU |
28.608 |
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- | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDU |
26.550 |
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- | Schottky | 40V | 2A | 560mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 40V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 1A PMDTM |
44.016 |
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- | Schottky | 60V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD3 |
22.662 |
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- | Schottky | 40V | 100mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | 6pF @ 10V, 1MHz | Surface Mount | SC-70, SOT-323 | UMD3 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS |
17.928 |
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Automotive, AEC-Q101 | Schottky | 30V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
17.358 |
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Automotive, AEC-Q101 | Schottky | 60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 350V 10A TO252 |
21.276 |
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- | Standard | 350V | 10A | 1.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 350V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
17.766 |
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- | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
22.716 |
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- | Standard | 600V | 10A | 2.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 6A TO220AC |
6.528 |
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- | Silicon Carbide Schottky | 600V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 6A TO-220-2 |
4.372 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO220AC |
18.048 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO-220-2 |
21.120 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 8A TO220AC |
18.282 |
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- | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 345pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
15.840 |
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- | Silicon Carbide Schottky | 650V | 12A | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 10A TO220-2 |
19.044 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 12A TO220AC |
20.496 |
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- | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 516pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 10A TO247 |
473 |
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- | Silicon Carbide Schottky | 1200V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 1200V 15A TO220-2 |
22.404 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.6V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 1200V | 790pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 600V 20A TO220AC |
12.918 |
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- | Silicon Carbide Schottky | 600V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 860pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE RECTIFIER FRD 30V-VR 0.2 |
143.262 |
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Automotive, AEC-Q101 | Schottky | 30V | 200mA | 470mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |