Renesas Electronics America Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerRenesas Electronics America
Datensätze 30
Seite 1/1
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
56 |
|
- | Standard | 600V | 30A (DC) | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
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Renesas Electronics America |
DIODE GEN PURP 600V 5A TO252 |
4.014 |
|
- | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Renesas Electronics America |
DIODE GEN PURP 600V 10A TO252 |
3.510 |
|
- | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Renesas Electronics America |
DIODE GEN PURP 600V 5A TO220FP |
6.084 |
|
- | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
6.012 |
|
- | Standard | 600V | 10A (DC) | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
7.488 |
|
- | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FP |
2.376 |
|
- | Standard | 600V | 20A (DC) | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
8.208 |
|
- | Standard | 600V | 30A | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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|
Renesas Electronics America |
DIODE SCHOTTKY 600V 10A TO220FP |
6.390 |
|
- | Schottky | 600V | 10A (DC) | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Surface Mount | TO-220-3 Full Pack | TO-220FP | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE SCHOTTKY 600V 15A TO220FP |
8.154 |
|
- | Schottky | 600V | 15A (DC) | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 360V 10A LDPAK |
6.444 |
|
- | Standard | 360V | 10A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 360V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 360V 20A TO252 |
2.934 |
|
- | Standard | 360V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 360V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 430V 10A LDPAK |
6.822 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GP 430V 10A TO220FP-2L |
2.592 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 430V 20A TO252 |
4.878 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 430V 20A LDPAK |
3.240 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GP 430V 20A TO220FP-2L |
3.348 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 600V 20A TO252 |
8.856 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
4.410 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
8.802 |
|
- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FL |
3.924 |
|
- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220FL | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 30A LDPAK |
5.760 |
|
- | Standard | 600V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
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Renesas Electronics America |
DIODE GEN PURP 600V TO252 |
8.550 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
DIODE GEN PURP 600V TO220FP |
4.518 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Renesas Electronics America |
DIODE GEN PURP 600V TO220FP |
2.466 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Renesas Electronics America |
DIODE TO-263 |
5.166 |
|
- | Standard | 360V | 10A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 360V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE SCHOTTKY TO220FP |
2.736 |
|
- | Silicon Carbide Schottky | 600V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AB-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE SCHOTTKY TO220FP |
5.454 |
|
- | Silicon Carbide Schottky | 600V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AB-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE SCHOTTKY TO220FP |
6.966 |
|
- | Silicon Carbide Schottky | 600V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
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Renesas Electronics America |
DIODE SCHOTTKY TO220FP |
8.244 |
|
- | Silicon Carbide Schottky | 600V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AB-2L | 150°C (Max) |