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ON Semiconductor Transistoren - Bipolar (BJT) - Einfach, vorgespannt

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Einfach, vorgespannt
HerstellerON Semiconductor
Datensätze 591
Seite 13/20
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Transistortyp
Strom - Kollektor (Ic) (max.)
Spannung - Kollektor-Emitter-Durchschlag (max.)
Widerstand - Basis (R1)
Widerstand - Emitterbasis (R2)
Gleichstromverstärkung (hFE) (min) @ Ic, Vce
Vce-Sättigung (Max) @ Ib, Ic
Strom - Kollektorabschaltung (max.)
Frequenz - Übergang
Leistung - max
Montagetyp
Paket / Fall
Lieferantengerätepaket
FJN3311RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
7.686
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3308RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
2.916
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3307RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
7.542
-
NPN - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3309RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
8.424
-
NPN - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3313RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
3.042
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3308RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
5.490
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3312RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
6.642
-
NPN - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3312RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
5.274
-
NPN - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3311RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
4.410
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3310RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
5.616
-
NPN - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3313RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
2.754
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3314RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
5.364
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3306RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
7.434
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4314RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4.554
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3310RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
3.924
-
NPN - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3307RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
8.568
-
NPN - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3303RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
3.472
-
NPN - Pre-Biased
100mA
50V
22 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3304RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
6.642
-
NPN - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3309RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
7.344
-
NPN - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3315RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
2.916
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3305RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
3.456
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3304RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
8.550
-
NPN - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4309RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
5.742
-
PNP - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4310RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
3.906
-
PNP - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4302RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8.622
-
PNP - Pre-Biased
100mA
50V
10 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4312RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
6.678
-
PNP - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4311RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8.514
-
PNP - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3315RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
8.406
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4311RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
7.002
-
PNP - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4313RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4.932
-
PNP - Pre-Biased
100mA
50V
2.2 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3