ON Semiconductor PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
HerstellerON Semiconductor
Datensätze 381
Seite 8/13
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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ON Semiconductor |
IC MOSFET DVR HIGH VOLT 8SOIC |
8.064 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.3V | 250mA, 500mA | Inverting, Non-Inverting | 600V | 85ns, 35ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER HI LOW SIDE 14SOP |
2.574 |
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- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOP |
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ON Semiconductor |
IC GATE DVR SGL 9A TTL 8SOIC |
2.106 |
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Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 10.6A, 11.4A | Non-Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A CMOS 8-SOIC |
5.958 |
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Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | - | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR SGL 9A HS INV 8-SOIC |
2.394 |
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Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 10.6A, 11.4A | Inverting | - | 23ns, 19ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL 4A TTL 8SOIC |
3.942 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR LOSIDE DUAL 4A 8SOIC |
4.392 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | - | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL 4A 8-SOIC |
3.562 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | - | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER DUAL 4A 8-SOIC |
2.214 |
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Automotive, AEC-Q100 | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR DUAL INV 4A 8-SOIC |
4.806 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | - | 5A, 5A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DRIVER DUAL 4A 8SOIC |
5.940 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 5A, 5A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
HIGH PERFORMANCE DUAL MOS |
4.302 |
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- | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 8.5V ~ 20V | 0.8V, 2.7V | 4A, 4A | Non-Inverting | 200V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (4x4) |
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ON Semiconductor |
HIGH PERFORMANCE DUAL MOS |
6.534 |
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- | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 8.5V ~ 20V | 0.8V, 2.7V | 4A, 4A | Non-Inverting | 200V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WDFN (4x4) |
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ON Semiconductor |
HIGH VOLT GATE DRIVER SO8 |
6.858 |
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Automotive, AEC-Q100 | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 25ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
INT DRIVER AND MOSFET |
6.444 |
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- | Half-Bridge, Low-Side | Single | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.7V, 2.65V | 100mA, 100mA | Non-Inverting | - | 12ns, 6ns | -40°C ~ 125°C (TJ) | Surface Mount | 31-PowerWFQFN | 31-PQFN (5x5) |
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ON Semiconductor |
IC MOSFET DVR HI/LO SIDE PQFN31 |
5.526 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
HIGH SIDE AND LOW SIDE GA |
8.388 |
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Automotive, AEC-Q100 | High-Side or Low-Side | Synchronous | 2 | N-Channel MOSFET | 8V ~ 16V | 2V, 1.8V | 3A, 6A | Non-Inverting | 100V | 6ns, 4ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
7.704 |
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- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 2.5V | 350mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC |
3.420 |
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- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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ON Semiconductor |
IC MOSFET DVR HI/LO SIDE PQFN39 |
4.284 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
INTEGRATED DRIVER & MOSFF |
8.442 |
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- | Half-Bridge, Low-Side | Single | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.65V, 2.7V | 100mA, 100mA | Non-Inverting | 30V | 17ns, 26ns | -40°C ~ 125°C (TJ) | Surface Mount | 39-PowerVFQFN | 39-PQFN (5x6) |
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ON Semiconductor |
IC MOSFET PRE-DVR HEX LO 32QFN |
4.284 |
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Automotive, AEC-Q100, FLEXMOS™ | Low-Side | Independent | 6 | N-Channel MOSFET | 4.75V ~ 5.25V | 0.8V, 2V | - | Non-Inverting | - | 277ns (Max), 277ns (Max) | -40°C ~ 150°C (TJ) | Surface Mount | 32-VFQFN Exposed Pad | 32-QFN (5x5) |
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ON Semiconductor |
AUTOMOTIVE DRIVER |
5.508 |
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Automotive, AEC-Q100, FLEXMOS™ | Low-Side | Independent | 6 | N-Channel MOSFET | 4.75V ~ 5.25V | 0.8V, 2V | - | Non-Inverting | - | 277ns (Max), 277ns (Max) | -40°C ~ 150°C (TJ) | Surface Mount | 32-TQFP Exposed Pad | 32-TQFP-EP (5x5) |
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ON Semiconductor |
IC GATE DVR HI/LOW SIDE 8SOIC |
6.372 |
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Automotive, AEC-Q100 | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 22V | 1.2V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8SOIC |
7.434 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC DRIVER MOSFET DUAL HS 8DIP |
7.164 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8SOIC |
7.182 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
5.238 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.5V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Inverting | - | 31ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8-SOIC |
6.966 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER DUAL HS 8DIP |
3.024 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |