ON Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerON Semiconductor
Datensätze 2.271
Seite 66/76
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
DIODE GP 50V 6A MICRODE BUTTON |
5.094 |
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- | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 50V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON |
2.844 |
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- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 100V 6A MICRODE BUTTON |
5.202 |
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- | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 100V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON |
2.088 |
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- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GP 200V 6A MICRODE BUTTON |
5.220 |
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- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | - | Through Hole | Button, Axial | Microde Button | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
7.488 |
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- | Standard | 50V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
7.992 |
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- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
7.128 |
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- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
8.478 |
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- | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
5.022 |
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- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A SMA |
8.298 |
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- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 1A AXIAL |
5.598 |
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SWITCHMODE™ | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
2.682 |
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SWITCHMODE™ | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 1A AXIAL |
4.842 |
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SWITCHMODE™ | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 300V 1A AXIAL |
8.532 |
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SWITCHMODE™ | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 300V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 1A AXIAL |
3.924 |
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SWITCHMODE™ | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
6.498 |
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SWITCHMODE™ | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 150V 15A TO220-2 |
7.614 |
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SWITCHMODE™ | Standard | 150V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
4.824 |
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SWITCHMODE™ | Standard | 800V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 20A TO220AC |
8.514 |
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SWITCHMODE™ | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6.426 |
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SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
8.532 |
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SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
2.700 |
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SWITCHMODE™ | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
6.210 |
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SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
6.138 |
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SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
7.614 |
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SWITCHMODE™ | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
7.128 |
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SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
5.490 |
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SWITCHMODE™ | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
3.438 |
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SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 2A AXIAL |
7.902 |
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SWITCHMODE™ | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |