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Microsemi Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerMicrosemi Corporation
Datensätze 611
Seite 20/21
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
JANTXV2N6898
Microsemi
MOSFET P-CHANNEL 100V 25A TO3
3.996
-
P-Channel
MOSFET (Metal Oxide)
100V
25A (Tc)
10V
200mOhm @ 15.8A, 10V
4V @ 250µA
-
±20V
3000pF @ 25V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-204AA, TO-3
APT1001R1BN
Microsemi
MOSFET N-CH 1000V 10.5A TO247AD
6.480
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
10.5A (Tc)
10V
1.1Ohm @ 5.25A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1001RBN
Microsemi
MOSFET N-CH 1000V 11A TO247AD
5.274
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
11A (Tc)
10V
1Ohm @ 5.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT1002RBNG
Microsemi
MOSFET N-CH 1000V 8A TO247AD
6.066
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
1000V
8A (Tc)
10V
1.6Ohm @ 4A, 10V
4V @ 1mA
105nC @ 10V
±30V
1800pF @ 25V
-
240W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT4065BNG
Microsemi
MOSFET N-CH 400V 11A TO247AD
6.516
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
11A (Tc)
10V
650mOhm @ 5.5A, 10V
4V @ 1mA
55nC @ 10V
±30V
950pF @ 25V
-
180W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT40M42JN
Microsemi
MOSFET N-CH 400V 86A ISOTOP
3.384
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
86A (Tc)
10V
42mOhm @ 43A, 10V
4V @ 5mA
760nC @ 10V
±30V
14000pF @ 25V
-
690W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT40M75JN
Microsemi
MOSFET N-CH 400V 56A ISOTOP
5.346
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
400V
56A (Tc)
10V
75mOhm @ 28A, 10V
4V @ 2.5mA
370nC @ 10V
±30V
6800pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5012JN
Microsemi
MOSFET N-CH 500V 43A ISOTOP
6.966
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
43A (Tc)
10V
120mOhm @ 21.5A, 10V
4V @ 2.5mA
370nC @ 10V
±30V
6500pF @ 25V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5020BN
Microsemi
MOSFET N-CH 500V 28A TO247AD
4.626
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
200mOhm @ 14A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5020BNFR
Microsemi
MOSFET N-CH 500V 28A TO247AD
5.148
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
28A (Tc)
10V
200mOhm @ 14A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5022BNG
Microsemi
MOSFET N-CH 500V 27A TO247AD
3.978
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
27A (Tc)
10V
220mOhm @ 13.5A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT5025BN
Microsemi
MOSFET N-CH 500V 23A TO247AD
2.916
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
500V
23A (Tc)
10V
250mOhm @ 11.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6030BN
Microsemi
MOSFET N-CH 600V 23A TO247AD
3.654
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
23A (Tc)
10V
300mOhm @ 11.5A, 10V
4V @ 1mA
210nC @ 10V
±30V
3500pF @ 25V
-
360W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6040BN
Microsemi
MOSFET N-CH 600V 18A TO247AD
3.870
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
400mOhm @ 9A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT6040BNG
Microsemi
MOSFET N-CH 600V 18A TO247AD
8.298
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
600V
18A (Tc)
10V
400mOhm @ 9A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT8018JN
Microsemi
MOSFET N-CH 800V 40A ISOTOP
8.946
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
800V
40A (Tc)
10V
180mOhm @ 20A, 10V
4V @ 5mA
700nC @ 10V
±30V
14000pF @ 25V
-
690W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT8075BN
Microsemi
MOSFET N-CH 800V 13A TO247AD
2.718
POWER MOS IV®
N-Channel
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
750mOhm @ 6.5A, 10V
4V @ 1mA
130nC @ 10V
±30V
2950pF @ 25V
-
310W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT58MJ50J
Microsemi
MOSFET N-CH 500V 58A ISOTOP
7.632
POWER MOS 8™
N-Channel
MOSFET (Metal Oxide)
500V
58A (Tc)
10V
65mOhm @ 42A, 10V
5V @ 2.5mA
340nC @ 10V
±30V
13500pF @ 25V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M07JVR
Microsemi
MOSFET N-CH 100V 225A ISOTOP
7.866
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
100V
225A (Tc)
10V
-
4V @ 5mA
1050nC @ 10V
±30V
21600pF @ 25V
-
700W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT10M11JVR
Microsemi
MOSFET N-CH 100V 144A ISOTOP
7.452
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
100V
144A (Tc)
10V
-
4V @ 2.5mA
450nC @ 10V
±30V
10300pF @ 25V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT4012BVR
Microsemi
MOSFET N-CH 400V 37A TO247AD
2.952
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
4V @ 1mA
290nC @ 10V
±30V
5400pF @ 25V
-
370W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT4012BVRG
Microsemi
MOSFET N-CH 400V 37A TO247AD
8.442
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
400V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
4V @ 1mA
290nC @ 10V
±30V
5400pF @ 25V
-
370W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
APT12080JVR
Microsemi
MOSFET N-CH 1200V 15A ISOTOP
2.322
POWER MOS V®
N-Channel
MOSFET (Metal Oxide)
1200V
15A (Tc)
10V
800mOhm @ 7.5A, 10V
4V @ 2.5mA
485nC @ 10V
±30V
7800pF @ 25V
-
450W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT5014B2VRG
Microsemi
MOSFET N-CH 500V T-MAX
2.160
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT4016BVRG
Microsemi
MOSFET N-CH 400V TO-247
6.336
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT130SM70B
Microsemi
MOSFET N-CH 700V TO247
8.262
-
N-Channel
SiCFET (Silicon Carbide)
700V
110A (Tc)
20V
45mOhm @ 60A, 20V
2.4V @ 1mA
220nC @ 20V
+25V, -10V
3950pF @ 700V
-
556W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT130SM70J
Microsemi
MOSFET N-CH 700V SOT227
6.390
-
N-Channel
SiCFET (Silicon Carbide)
700V
78A (Tc)
20V
45mOhm @ 60A, 20V
2.4V @ 1mA
270nC @ 20V
+25V, -10V
3950pF @ 700V
-
273W (Tc)
-55°C ~ 175°C (TJ)
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
APT35SM70B
Microsemi
MOSFET N-CH 700V TO247
6.390
-
N-Channel
SiCFET (Silicon Carbide)
700V
35A (Tc)
20V
145mOhm @ 10A, 20V
2.5V @ 1mA
67nC @ 20V
+25V, -10V
1035pF @ 700V
-
176W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
APT35SM70S
Microsemi
MOSFET N-CH 700V D3PAK
8.766
-
-
SiCFET (Silicon Carbide)
700V
35A
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
APT5SM170B
Microsemi
MOSFET N-CH 700V TO247
5.436
-
N-Channel
SiCFET (Silicon Carbide)
1700V
5A (Tc)
20V
1.25Ohm @ 2.5A, 20V
3.2V @ 500µA
21nC @ 20V
+25V, -10V
249pF @ 1000V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3