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Micron Technology Inc. Speicher

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KategorieHalbleiter / Speicher-ICs / Speicher
HerstellerMicron Technology Inc.
Datensätze 8.604
Seite 50/287
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Speichertyp
Speicherformat
Technologie
Speichergröße
Speicherschnittstelle
Taktfrequenz
Schreibzykluszeit - Wort, Seite
Zugriffszeit
Spannung - Versorgung
Betriebstemperatur
Montagetyp
Paket / Fall
Lieferantengerätepaket
MTFC64GAKAEEY-3M WT
Micron Technology Inc.
IC FLASH 512G MMC 153LFBGA
8.388
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
Surface Mount
153-LFBGA
153-LFBGA (11.5x13)
MT49H16M36SJ-18 IT:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 144FBGA
5.688
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
533MHz
-
15ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT49H16M36SJ-18 IT:B
Micron Technology Inc.
IC DRAM 576M PARALLEL 144FBGA
3.168
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
533MHz
-
15ns
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
144-TFBGA
144-FBGA (18.5x11)
MT44K32M36RB-107E:A TR
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 168BGA
5.940
-
Volatile
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
933MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT44K64M18RB-107E:A TR
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 168BGA
6.894
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
933MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT44K32M36RB-107E:A
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 933MHZ
8.890
-
Volatile
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
933MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT44K64M18RB-107E:A
Micron Technology Inc.
IC DRAM 1.125G PARALLEL 933MHZ
2.643
-
Volatile
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
933MHz
-
8ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MTFC256GAOAMAM-WT
Micron Technology Inc.
IC FLASH 2T MMC
4.842
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MTFC256GAOAMAM-WT TR
Micron Technology Inc.
IC FLASH 2T MMC
4.536
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
MMC
-
-
-
-
-25°C ~ 85°C (TA)
-
-
-
MTFC64GAKAEYF-4M IT
Micron Technology Inc.
IC FLASH 512G MMC
6.552
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-LFBGA
153-LFBGA (11.5x13)
MTFC64GAKAEYF-4M IT TR
Micron Technology Inc.
IC FLASH 512G MMC
3.348
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-LFBGA
153-LFBGA (11.5x13)
MT44K16M36RB-093E IT:B TR
Micron Technology Inc.
IC DRAM 576M PARALLEL 168BGA
2.664
-
Volatile
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
8ns
1.28V ~ 1.42V
-40°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA (13.5x13.5)
MT28HL32GQBB3ERK-0GCT
Micron Technology Inc.
NOR FLASH 1GX32 PLASTIC PBF FBGA
6.768
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT28HL32GQBB3ERK-0GCT TR
Micron Technology Inc.
IC FLASH NOR MLC 1GX32 FBGA
6.912
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B1024M32D4NQ-062 WT:C TR
Micron Technology Inc.
IC DRAM 32G 1600MHZ FBGA
6.552
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
MT53D4DBNW-DC TR
Micron Technology Inc.
IC DRAM LPDDR4 SMD
7.380
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F2T08EMHAFJ4-3ITFES:A TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 132VBGA
8.874
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
-
MT29F2T08EMHAFJ4-3ITFES:A
Micron Technology Inc.
IC FLASH 2T PARALLEL 132VBGA
3.924
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
-
MTFC64GAJAEDN-AIT TR
Micron Technology Inc.
IC FLASH 512G MMC 169LFBGA
7.668
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MTFC64GAJAECE-AIT
Micron Technology Inc.
IC FLASH 512G MMC
3.561
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MTFC64GAJAEDQ-AIT
Micron Technology Inc.
IC FLASH 512G MMC
8.392
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
MTFC64GAJAECE-AIT TR
Micron Technology Inc.
IC FLASH 512G MMC
7.020
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MTFC64GAJAEDQ-AIT TR
Micron Technology Inc.
IC FLASH 512G MMC
2.502
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
MTFC64GAJAEDN-AIT
Micron Technology Inc.
IC FLASH 512G MMC
6.033
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MT53E1536M32D4DT-046 WT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
5.292
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 WT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
2.736
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1536M32D4DT-046 WT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
1.888
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E768M64D4SQ-046 WT:A
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
8.874
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D1536M32D6BE-053 WT:D
Micron Technology Inc.
IC DRAM 48G 1866MHZ
4.086
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (1.5G x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT29F2T08EMHAFJ4-3T:A
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
4.086
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)