Maxim Integrated PMIC - Gate-Treiber
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
HerstellerMaxim Integrated
Datensätze 306
Seite 7/11
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Maxim Integrated |
IC DVR QUAD HISIDE MOSFET 18-DIP |
2.916 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | -40°C ~ 85°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-PDIP |
|
|
Maxim Integrated |
IC DVR QUAD HISIDE MOSFET 18SOIC |
4.968 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | -40°C ~ 85°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
|
|
Maxim Integrated |
IC DVR DUAL-POWER MOSFET 8-DIP |
6.498 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DVR DUAL-POWER MOSFET 8-SOIC |
5.004 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DVR DUAL-POWER MOSFET 8-DIP |
3.690 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DVR DUAL-POWER MOSFET 8-SOIC |
4.355 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER SW MOSF HI SIDE 8UMAX |
5.220 |
|
- | High-Side | Single | 1 | N-Channel MOSFET | 5V ~ 26V | 0.6V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-uMAX |
|
|
Maxim Integrated |
IC DRIVER SW MOSF HI SIDE 8UMAX |
6.552 |
|
- | High-Side | Single | 1 | N-Channel MOSFET | 5V ~ 26V | 0.6V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-uMAX |
|
|
Maxim Integrated |
IC MOSFET DVR DUAL PWR 8-SOIC |
7.722 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 17V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DVR DUAL PWR 8-SOIC |
6.768 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 17V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET DUAL 8-SOIC |
8.928 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET DUAL 20-TQFN |
1.013 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5V ~ 28V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 16ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-WFQFN Exposed Pad | 20-TQFN (4x4) |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
3.400 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC DRVR MOSFET QUAD 18-SOIC |
7.686 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | -40°C ~ 85°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET QUAD 18-SOIC |
2.376 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRIVER SOT23-6 |
3.438 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
|
|
Maxim Integrated |
IC DRVR FET P-P 14-TSSOP |
2.484 |
|
- | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 15V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-TSSOP-EP |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
3.186 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET DUAL 20-TQFN |
3.024 |
|
- | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5V ~ 28V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 16ns, 14ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-WFQFN Exposed Pad | 20-TQFN (4x4) |
|
|
Maxim Integrated |
IC MOSFET DRIVER 12-TQFN |
5.076 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 12-WQFN Exposed Pad | 12-TQFN (4x4) |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
2.070 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
7.398 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | 0.8V, 2V | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
3.798 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
7.398 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
3.636 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
2.052 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 12.6V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC DRVR FET P-P 8-UMAX |
8.046 |
|
- | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 15V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
|
|
Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN |
8.316 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 6.5V ~ 28V | - | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
|
|
Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN |
4.878 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 28V | - | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
|
|
Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN |
7.146 |
|
Automotive, AEC-Q100 | Low-Side | Single | 1 | N-Channel MOSFET | 6.5V ~ 28V | 2V, 4.25V | 4A, 8A | Inverting, Non-Inverting | - | 24ns, 16ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |