IXYS Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerIXYS
Datensätze 2.184
Seite 37/73
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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IXYS |
MOSFET N-CH 1500V 3A TO-263 |
7.074 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 3A (Tc) | 10V | 7.3Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6nC @ 10V | ±30V | 1375pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 15A I4-PAC-5 |
5.184 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | ISOPLUSi5-Pak™ |
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IXYS |
MOSFET P-CH 500V 11A TO-247AD |
5.886 |
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- | P-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 100V 50A TO-268 |
8.982 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 140nC @ 10V | ±20V | 4350pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 650V 52A TO-247 |
7.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 52A (Tc) | 10V | 68mOhm @ 26A, 10V | 5V @ 250µA | 113nC @ 10V | ±30V | 4350pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 11A ISOPLUS247 |
6.246 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 500mOhm @ 10A, 10V | 5V @ 4mA | 85nC @ 10V | ±30V | 4680pF @ 25V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 69A TO-247 |
8.766 |
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PolarHT™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 4mA | 180nC @ 10V | ±20V | 4960pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-3P |
3.744 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 5440pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1000V 1.5A 8-SOIC |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 300V 80A TO-268 |
2.844 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 600V 50A TO247 |
6.336 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116nC @ 10V | ±30V | 4660pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 150V 75A TO-247 |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 75A (Tc) | 10V | 23mOhm @ 500mA, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 5400pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET P-CH 200V 24A TO-268 |
3.510 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 110mOhm @ 500mA, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 35A TO-220AB |
7.794 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 100mOhm @ 18A, 10V | 3.9V @ 1.2mA | 70nC @ 10V | ±20V | 2800pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 7A TO-247AD |
3.546 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4.5V @ 2.5mA | 130nC @ 10V | ±20V | 2800pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1500V 6A TO-247 |
2.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 6A (Tc) | 10V | 3.5Ohm @ 500mA, 10V | 5V @ 250µA | 67nC @ 10V | ±20V | 2230pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 40V 420A TO-247 |
2.106 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 420A (Tc) | 10V | 2mOhm @ 100A, 10V | 3.5V @ 250µA | 315nC @ 10V | ±20V | 19700pF @ 25V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1500V 2.5A ISOTO-247 |
7.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5nC @ 10V | ±30V | 1576pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 36A TO-268 D3 |
7.020 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85nC @ 10V | ±30V | 5500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 600V 30A TO-268 D3 |
6.264 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 250µA | 82nC @ 10V | ±30V | 5050pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 500V 52A TO268 |
3.240 |
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HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 52A (Tc) | 10V | 120mOhm @ 26A, 10V | 4.5V @ 4mA | 113nC @ 10V | ±30V | 6800pF @ 25V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1200V 6A TO-247 |
7.056 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.6Ohm @ 3A, 10V | 5V @ 2.5mA | 56nC @ 10V | ±20V | 1950pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 100A TO-3P |
6.048 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 100A (Tc) | 10V | 24mOhm @ 50A, 10V | 5V @ 250µA | 185nC @ 10V | ±20V | 6300pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 200V 120A TO-3P |
2.790 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 250µA | 152nC @ 10V | ±20V | 6000pF @ 25V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 150V 150A TO-3P |
8.010 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 150A (Tc) | 10V | 13mOhm @ 500mA, 10V | 5V @ 250µA | 190nC @ 10V | ±20V | 5800pF @ 25V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 900V 6A TO-247 |
3.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.8Ohm @ 500mA, 10V | 4.5V @ 250µA | 130nC @ 10V | ±20V | 2600pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 170A TO-264 |
2.592 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198nC @ 10V | ±20V | 6000pF @ 25V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 24A TO-264 |
4.266 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 400mOhm @ 12A, 10V | 5V @ 4mA | 105nC @ 10V | ±30V | 7200pF @ 25V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 900V 7A TO-247 |
3.454 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.5Ohm @ 500mA, 10V | 5V @ 2.5mA | 56nC @ 10V | ±20V | 2200pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 850V 9.5A TO247 |
3.096 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 9.5A (Tc) | 10V | 360mOhm @ 10A, 10V | 5.5V @ 2.5mA | 63nC @ 10V | ±30V | 1660pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISO TO-247-3 | TO-247-3 |