ISSI, Integrated Silicon Solution Inc Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
HerstellerISSI, Integrated Silicon Solution Inc
Datensätze 4.379
Seite 69/146
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Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100TQFP |
8.082 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100TQFP |
5.238 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 100LQFP |
4.086 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 4Mb (128K x 32) | Parallel | 117MHz | - | 7.5ns | 2.375V ~ 2.625V | -40°C ~ 125°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
4.932 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5.508 |
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- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5.076 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
4.788 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5.580 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA |
3.510 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 60TWBGA |
3.996 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (256M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48MINIBGA |
7.614 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 8Mb (1M x 8) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (9x11) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
4.968 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
2.340 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
3.508 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 133MHz | - | 6ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA |
3.600 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (128M x 16) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
5.400 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
7.938 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 134TFBGA |
7.632 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 1Gb (32M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | 0°C ~ 85°C (TA) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 165TFBGA |
7.362 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 165TFBGA |
8.352 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
8.118 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5.058 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
3.384 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5.166 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
6.966 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
8.784 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5.778 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 100TQFP |
5.994 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
7.866 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 9M PARALLEL 117MHZ |
6.678 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (256K x 36) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |