Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 207/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252 |
5.904 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
5.310 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19nC @ 10V | ±20V | 700pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
5.868 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | ±20V | 2170pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 180A 2WDSON |
4.662 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 169nC @ 10V | ±20V | 16900pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 25V 170A WDSON-2 |
6.318 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2V @ 250µA | 67nC @ 10V | ±20V | 4900pF @ 12V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 147A 2WDSON |
4.194 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 147A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.2V @ 250µA | 102nC @ 10V | ±20V | 7800pF @ 15V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT363 |
2.682 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | ±20V | 294pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT363 |
6.822 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 160mOhm @ 1.4A, 2.5V | 950mV @ 3.7µA | 0.6nC @ 2.5V | ±8V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 30V 60A 2WDSON |
3.490 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 3000pF @ 15V | - | 2.2W (Ta), 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 500V 400MA SOT-223 |
6.138 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 500V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
5.364 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223 |
8.910 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9nC @ 10V | ±20V | 154pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
4.914 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9nC @ 5V | ±20V | 44pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
3.114 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | ±20V | 68pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
8.856 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2.3V @ 26µA | 1.5nC @ 10V | ±20V | 56pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT23 |
6.012 |
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Automotive, AEC-Q101, SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N CH 100V 56A DPAK |
7.740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81nC @ 10V | ±20V | 3031pF @ 50V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 61A D2PAK |
6.102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 61A (Tc) | 10V | 13.9mOhm @ 37A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3180pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX |
4.788 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 1.4mOhm @ 90A, 10V | 3.9V @ 150µA | 212nC @ 10V | ±20V | 6852pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N CH 40V 100A PQFN5X6 |
3.582 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194nC @ 10V | ±20V | 6419pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N CH 100V 11A PQFN5X6 |
6.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3240pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 87A DPAK |
6.138 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 2150pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
7.146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
4.050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | ±20V | 6600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
2.556 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
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Infineon Technologies |
MOSFET N-CH 20V 4.2A 8SOIC |
6.678 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | - | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5nC @ 4.5V | - | 310pF @ 15V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK |
3.400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK |
2.736 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
4.536 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK |
8.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |