Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 179/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 25V 39A DIRECTFET |
4.824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59nC @ 4.5V | ±20V | 5150pF @ 13V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
2.538 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 17nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET |
5.778 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.7mOhm @ 13A, 10V | 2.4V @ 50µA | 17nC @ 4.5V | ±20V | 1300pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET |
8.136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 58A (Tc) | 4.5V, 10V | 7.3mOhm @ 13A, 10V | 2.4V @ 50µA | 17nC @ 4.5V | ±20V | 1320pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
2.700 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 4404pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 28A DIRECTFET |
7.902 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 4700pF @ 15V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
3.078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | ±20V | 6140pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
2.322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | ±20V | 6190pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 150V 4.9A DIRECTFET |
2.412 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.9A (Ta), 28A (Tc) | 10V | 56mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1411pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 200V 3.4A DIRECTFET |
5.454 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.4A (Ta), 19A (Tc) | 10V | 100mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1500pF @ 25V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC |
8.910 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA | 50nC @ 4.5V | ±12V | 1500pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7.344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 10A 8-SOIC |
7.884 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC |
5.814 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC |
3.150 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 26mOhm @ 4.2A, 10V | 3V @ 250µA | 31nC @ 4.5V | ±20V | 1740pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP |
2.898 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.6A (Ta) | 2.5V, 4.5V | 15mOhm @ 8.6A, 4.5V | 1.2V @ 250µA | 89nC @ 5V | ±12V | 4300pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP |
8.388 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Ta) | 1.8V, 4.5V | 11mOhm @ 10A, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | ±8V | 5050pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 8A 8-TSSOP |
3.672 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Ta) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81nC @ 4.5V | ±8V | 3470pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6A 8-TSSOP |
3.276 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62nC @ 4.5V | ±20V | 5220pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7.128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8-SOIC |
5.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | 2.25V @ 250µA | 27nC @ 4.5V | ±20V | 2080pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
6.372 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 33A (Tc) | 4.5V, 10V | 8.7mOhm @ 15A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1095pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
5.616 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
6.876 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | ±16V | 1900pF @ 25V | - | 3.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
8.442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 43A D2PAK |
3.078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK |
3.762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A DPAK |
2.070 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8 |
4.914 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK-5 |
8.928 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | ±16V | 1900pF @ 25V | - | 3.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |