Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 155/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET |
2.628 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1250pF @ 10V | - | 2.3W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
4.554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
6.876 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
8.982 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
8.118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1330pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET |
5.364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | ±20V | 3770pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET |
7.272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | ±20V | 3770pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET |
6.516 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V 5.7A DIRECTFET |
5.328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |
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Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET |
7.794 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2060pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET |
8.028 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2120pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V 8.3A DIRECTFET |
2.826 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1360pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET |
8.190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Infineon Technologies |
MOSFET N-CH 80V 55A DIRECTFET |
5.346 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1320pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
3.438 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 32A DIRECTFET |
6.804 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71nC @ 4.5V | ±12V | 6580pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 20V 32A DIRECTFET |
4.194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71nC @ 4.5V | ±12V | 6580pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 50A TDSON-8 |
7.362 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 100µA | 58nC @ 5V | ±20V | 7490pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
7.794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 90µA | 52nC @ 5V | ±20V | 6530pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
3.276 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 90µA | 51nC @ 5V | ±20V | 6540pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TDSON-8 |
3.906 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2V @ 70µA | 39nC @ 5V | ±20V | 5080pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3.834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3.7mOhm @ 50A, 10V | 2V @ 50µA | 29nC @ 5V | ±20V | 3660pF @ 15V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8 |
7.128 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2820pF @ 15V | - | 2.8W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 40A TDSON-8 |
3.960 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 7.2mOhm @ 40A, 10V | 2V @ 30µA | 18nC @ 5V | ±20V | 2230pF @ 15V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 35A TDSON-8 |
5.004 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | ±20V | 1800pF @ 15V | - | 2.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 35A TDSON-8 |
6.498 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14.6A (Ta), 35A (Tc) | 4.5V, 10V | 9.4mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | ±20V | 1800pF @ 15V | - | 2.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 30A TDSON-8 |
3.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 10.6mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1370pF @ 15V | - | 2.8W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8DSO |
8.874 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 6.4mOhm @ 16A, 10V | 2V @ 50µA | 28nC @ 5V | ±20V | 3620pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO |
3.222 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 2V @ 30µA | 18nC @ 5V | ±20V | 2300pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO |
8.694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | 4.5V, 10V | 9.7mOhm @ 13A, 10V | 2V @ 30µA | 16nC @ 5V | ±20V | 2130pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |