Infineon Technologies Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 112/225
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 40V 104A TO-262 |
8.478 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | ±16V | 3445pF @ 25V | - | 2.4W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 116A TO-262 |
8.694 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 104A TO-262 |
8.568 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 55A TO-262 |
2.520 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 38A TO-262 |
8.460 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 89A TO-262 |
8.496 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 140A TO-262 |
8.442 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 10A TO-262 |
3.456 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 36A TO-262 |
3.600 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 18A TO-262 |
6.156 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 30A TO-262 |
8.946 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 47A TO-262 |
2.376 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 22mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 5.4A 8-SOIC |
5.796 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.4A (Tc) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | ±12V | 780pF @ 15V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC |
7.002 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA | 74nC @ 5V | ±12V | 6000pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 40A TO-262 |
2.088 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 2700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 31A TO-262 |
3.960 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A TO-262 |
6.552 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 6.8A TO-262 |
4.122 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 14A TO-262 |
6.246 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 23A TO-262 |
3.798 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | ±20V | 1300pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 12A TO-262 |
4.824 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 19A TO-262 |
4.896 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 3A SOT-23 |
6.822 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 98mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 510pF @ 25V | - | 1.25W (Ta) | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 12V 5.5A 6-TSOP |
8.442 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 5.5A (Ta) | 2.5V, 4.5V | 42mOhm @ 5.5A, 4.5V | 600mV @ 250µA | 33nC @ 5V | ±12V | 1820pF @ 10V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET P-CH 20V 4.3A MICRO8 |
3.420 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | ±12V | 1066pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8 |
7.866 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 180pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK |
2.016 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3210pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
3.168 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 85A D2PAK |
2.862 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 100A TO-262 |
6.678 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93nC @ 10V | ±20V | 2900pF @ 25V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |