GeneSiC Semiconductor Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerGeneSiC Semiconductor
Datensätze 27
Seite 1/1
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
TRANS SJT 1200V 15A |
20.400 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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GeneSiC Semiconductor |
TRANS SJT 1200V 45A |
7.794 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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GeneSiC Semiconductor |
TRANS SJT 1200V 25A |
17.196 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | - | - |
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GeneSiC Semiconductor |
TRANS SJT 1700V 8A TO-247AB |
14.616 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 50A |
6.024 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209pF @ 800V | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO-247AB |
8.172 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 100V 9A |
6.156 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 100V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
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GeneSiC Semiconductor |
TRANS SJT 300V 9A |
4.752 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 300V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 25A TO263-7 |
8.496 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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GeneSiC Semiconductor |
TRANS SJT 600V 100A |
6.300 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 600V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA |
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GeneSiC Semiconductor |
TRANS SJT 1700V 16A TO-247AB |
8.460 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257 |
4.518 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 4A TO276 |
3.562 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257 |
5.634 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720pF @ 35V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276 |
6.678 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720pF @ 35V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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GeneSiC Semiconductor |
TRANS SJT 650V 15A TO-257 |
4.086 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534pF @ 35V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 16A TO276 |
8.208 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534pF @ 35V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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GeneSiC Semiconductor |
TRANS SJT 1200V 3A TO-247AB |
2.556 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO-247AB |
4.194 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 5A |
4.896 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 10A |
7.020 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 20A |
2.862 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A |
2.358 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
8.334 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247 |
7.074 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7 |
3.562 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227 |
8.694 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |