GeneSiC Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerGeneSiC Semiconductor
Datensätze 764
Seite 3/26
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 15A DO5 |
8.532 |
|
- | Standard | 200V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 175°C |
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 60A DO5 |
6.642 |
|
- | Standard, Reverse Polarity | 200V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 35A DO5 |
6.912 |
|
- | Standard | 100V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 40A DO5 |
6.264 |
|
- | Standard | 100V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 40A DO5 |
6.876 |
|
- | Standard, Reverse Polarity | 800V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 40A DO5 |
6.012 |
|
- | Standard | 400V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 40A DO5 |
6.348 |
|
- | Standard, Reverse Polarity | 800V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 45V DO5 |
7.488 |
|
- | Schottky, Reverse Polarity | 45V | 80A | 650mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
6.456 |
|
- | Standard, Reverse Polarity | 600V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 85A DO5 |
4.680 |
|
- | Standard, Reverse Polarity | 600V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.2KV DO205AA |
5.832 |
|
- | Standard, Reverse Polarity | 1200V | 150A | 1.5V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -60°C ~ 200°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 150A DO205AA |
4.086 |
|
- | Standard, Reverse Polarity | 600V | 150A | 1.33V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 35mA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 50A TO247AC |
6.720 |
|
- | Silicon Carbide Schottky | 1200V | 50A | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 1mA @ 1200V | 2940pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 175°C |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 100V 4A |
6.930 |
|
- | Silicon Carbide Schottky | 100V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 100V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 210°C |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 120A D-67 |
8.406 |
|
- | Schottky, Reverse Polarity | 40V | 120A | 700mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Chassis Mount | D-67 HALF-PAK | D-67 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 600V 4A |
8.478 |
|
- | Silicon Carbide Schottky | 600V | 4A (DC) | 1.6V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 600V | 76pF @ 1V, 1MHz | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | -55°C ~ 225°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV DO9 |
7.092 |
|
- | Standard, Reverse Polarity | 1600V | 300A | 1.2V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -60°C ~ 180°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 380A DO205 |
7.380 |
|
- | Standard | 1600V | 380A | 1.2V @ 380A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -60°C ~ 180°C |
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|
GeneSiC Semiconductor |
SIC DIODE 1200V 50A TO-247-2 |
6.504 |
|
- | Silicon Carbide Schottky | 1200V | 212A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 3263pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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|
GeneSiC Semiconductor |
DIODE SILICON 1.2KV 1A TO252 |
5.418 |
|
- | Silicon Carbide Schottky | 1200V | 1A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A TO220AC |
8.586 |
|
- | Silicon Carbide Schottky | 1200V | 2A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 138pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 12A DO4 |
6.732 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 12A DO4 |
4.374 |
|
- | Standard, Reverse Polarity | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 12A DO4 |
7.002 |
|
- | Standard | 50V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 35A DO5 |
8.694 |
|
- | Standard, Reverse Polarity | 400V | 35A | 1.2V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 30A DO5 |
6.636 |
|
- | Standard | 600V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 30A DO5 |
5.760 |
|
- | Standard | 400V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 35A DO4 |
247 |
|
- | Schottky | 45V | 35A | 680mV @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 750MA TO257 |
5.022 |
|
- | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257 |
4.320 |
|
- | Silicon Carbide Schottky | 650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |