Diodes Incorporated PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
HerstellerDiodes Incorporated
Datensätze 83
Seite 1/3
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
164.256 |
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Automotive, AEC-Q101 | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 2A | Non-Inverting | - | 210ns, 240ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DVR IGBT/MOSFET SOT26 |
269.364 |
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Automotive, AEC-Q101 | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 25V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
121.782 |
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- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 5A, 5A | Non-Inverting | - | 8.9ns, 8.9ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26 |
249.474 |
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- | Low-Side | Single | 1 | IGBT, SiC MOSFET | 40V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
145.218 |
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- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 8A, 8A | Non-Inverting | - | 13.4ns, 12.4ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
71.370 |
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- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 20V (Max) | - | 9A, 9A | Non-Inverting | - | 8.3ns, 10.8ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 10MSOP |
18.948 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 0.8V, 2.4V | 1.5A, 2A | Non-Inverting | 50V | 17ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
60.210 |
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- | Low-Side | Single | 1 | N-Channel MOSFET | 4.5V ~ 25V | - | 4A, 9A | Non-Inverting | - | 77ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTRLR 4A 8SO |
100.326 |
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- | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 5V ~ 15V | - | 2.5A, 6A | Non-Inverting | - | 450ns, 21ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
25.998 |
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- | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 5V ~ 25V | - | 2.5A, 7A | Non-Inverting | - | 480ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
28.062 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 (Type TH) |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
20.574 |
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- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
19.164 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 250V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE HV DRVR SO-8 |
25.278 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO Type TH |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLER SOT23 T& |
3.204 |
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- | Low-Side | Synchronous | 1 | N-Channel MOSFET | 3.5V ~ 40V | - | 1.5A, 3A | - | - | 360ns, 210ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRIVER SOT25 |
5.706 |
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- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.9A, 1.8A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSOT-25 |
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Diodes Incorporated |
IC GATE DRIVER SOT25 |
4.896 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.9A, 1.8A | Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSOT-25 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
8.226 |
|
- | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V (Max) | - | 9A, 9A | Non-Inverting | - | 7.3ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
7.056 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 14V | 0.8V, 2.4V | 1.5A, 2.5A | CMOS/TTL | 50V | 17ns, 12ns | -40°C ~ 125°C (TA) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
7.344 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 0.8V, 2.4V | 1.5A, 2A | CMOS/TTL | 50V | 17ns, 12ns | -40°C ~ 125°C (TA) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
6.804 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDG 8SO 2.5K |
7.794 |
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- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 200V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
6.012 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 0.8V, 2.4V | 1.5A, 2A | CMOS/TTL | 50V | 16ns, 18ns | -40°C ~ 125°C (TA) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
6.534 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 (Type TH) |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
5.544 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
3.544 |
|
- | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 7A | Non-Inverting | - | 175ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
8.928 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
7.110 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 250V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
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Diodes Incorporated |
IC GATE DRVR HALFBRDG DFN3030-10 |
8.802 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1V, 2.5V | 1.5A, 2.5A | Non-Inverting | 50V | 17ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 10-WFDFN Exposed Pad | W-DFN3030-10 (Type TH) |
|
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDG 8SO 2.5K |
6.804 |
|
- | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 200V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |