ZXMN6A11DN8TC Datenblatt
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Hersteller Diodes Incorporated Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.5A Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 330pF @ 40V Leistung - max 1.8W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Diodes Incorporated Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.5A Rds On (Max) @ Id, Vgs 120mOhm @ 2.5A, 10V Vgs (th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 330pF @ 40V Leistung - max 1.8W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
