ZXMD65P02N8TC Datenblatt
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Hersteller Diodes Incorporated Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4A Rds On (Max) @ Id, Vgs 50mOhm @ 2.9A, 4.5V Vgs (th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 960pF @ 15V Leistung - max 1.75W Betriebstemperatur - Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Diodes Incorporated Serie - FET-Typ 2 P-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4A Rds On (Max) @ Id, Vgs 50mOhm @ 2.9A, 4.5V Vgs (th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 960pF @ 15V Leistung - max 1.75W Betriebstemperatur - Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
