ZVN1409ASTZ Datenblatt
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Hersteller Diodes Incorporated Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 10mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs (th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6.5pF @ 25V FET-Funktion - Verlustleistung (max.) 625mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket E-Line (TO-92 compatible) Paket / Fall E-Line-3 |
Hersteller Diodes Incorporated Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 10mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs (th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6.5pF @ 25V FET-Funktion - Verlustleistung (max.) 625mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket E-Line (TO-92 compatible) Paket / Fall E-Line-3 |
Hersteller Diodes Incorporated Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 90V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 10mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250Ohm @ 5mA, 10V Vgs (th) (Max) @ Id 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6.5pF @ 25V FET-Funktion - Verlustleistung (max.) 625mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket E-Line (TO-92 compatible) Paket / Fall E-Line-3 |
