TPC8207(TE12L Datenblatt
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Hersteller Toshiba Semiconductor and Storage Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs (th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Eingangskapazität (Ciss) (Max) @ Vds 2010pF @ 10V Leistung - max 450mW Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.173", 4.40mm Width) Lieferantengerätepaket 8-SOP (5.5x6.0) |
Hersteller Toshiba Semiconductor and Storage Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 6A Rds On (Max) @ Id, Vgs 20mOhm @ 4.8A, 4V Vgs (th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Eingangskapazität (Ciss) (Max) @ Vds 2010pF @ 10V Leistung - max 450mW Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.173", 4.40mm Width) Lieferantengerätepaket 8-SOP (5.5x6.0) |
