TJ80S04M3L(T6L1 Datenblatt
TJ80S04M3L(T6L1 Datenblatt
Total Pages: 9
Größe: 237,39 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
Dieses Datenblatt behandelt 1 Teilenummern:
TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage Hersteller Toshiba Semiconductor and Storage Serie U-MOSVI FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 80A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 40A, 10V Vgs (th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 158nC @ 10V Vgs (Max) +10V, -20V Eingangskapazität (Ciss) (Max) @ Vds 7770pF @ 10V FET-Funktion - Verlustleistung (max.) 100W (Tc) Betriebstemperatur 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket DPAK+ Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |