SUD19P06-60-E3 Datenblatt
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Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 18.3A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1710pF @ 25V FET-Funktion - Verlustleistung (max.) 2.3W (Ta), 38.5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket TO-252, (D-Pak) Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 18.3A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 1710pF @ 25V FET-Funktion - Verlustleistung (max.) 2.3W (Ta), 38.5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket TO-252, (D-Pak) Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
