SN7002NL6433HTMA1 Datenblatt
![SN7002NL6433HTMA1 Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0001.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0002.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0003.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0004.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0005.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0006.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0007.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0008.webp)
![SN7002NL6433HTMA1 Datenblatt Seite 9](http://pneda.ltd/static/datasheets/images/21/sn7002nl6433htma1-0009.webp)
Hersteller Infineon Technologies Serie SIPMOS® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 45pF @ 25V FET-Funktion - Verlustleistung (max.) 360mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SOT-23-3 Paket / Fall TO-236-3, SC-59, SOT-23-3 |
Hersteller Infineon Technologies Serie SIPMOS® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 45pF @ 25V FET-Funktion - Verlustleistung (max.) 360mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SOT-23-3 Paket / Fall TO-236-3, SC-59, SOT-23-3 |
Hersteller Infineon Technologies Serie SIPMOS® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 45pF @ 25V FET-Funktion - Verlustleistung (max.) 360mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SOT-23-3 Paket / Fall TO-236-3, SC-59, SOT-23-3 |
Hersteller Infineon Technologies Serie SIPMOS® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.8V @ 26µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 45pF @ 25V FET-Funktion - Verlustleistung (max.) 360mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket SOT-23-3 Paket / Fall TO-236-3, SC-59, SOT-23-3 |